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TSM850N06CX RFG

P1-P3P4-P6
TSM850N06CX
Taiwan Semiconductor
1 Version: B1607
N-Channel Power MOSFET
60V, 3A, 85mΩ
FEATURES
● Low R
DS(ON)
to minimize conductive losses
● Logic level
● Low gate charge for fast power switching
● Compliant to RoHS directive 2011/65/EU and in
accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● BLDC Motor Control
● Battery Power Management
● LED backlight
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
V
DS
60
V
R
DS(on)
(max)
V
GS
= 10V
85
mΩ
V
GS
= 4.5V
100
Q
g
4.6
nC
Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
±20
V
Continuous Drain Current
(Note 1)
T
C
= 25°C
I
D
3
A
T
A
= 25°C
2.3
Pulsed Drain Current
I
DM
12
A
Total Power Dissipation
T
C
= 25°C
P
D
1.7
W
T
C
= 125°C
0.3
Total Power Dissipation
T
A
= 25°C
P
D
1
W
T
A
= 125°C
0.2
Operating Junction and Storage Temperature Range
T
J
, T
STG
- 55 to +150
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
R
ӨJC
75
°C/W
Junction to Ambient Thermal Resistance
R
ӨJA
124
°C/W
Thermal Performance Note: R
ӨJA
is the sum of the junction-to-case and case-to-ambient thermal resistances. The case-
thermal reference is defined at the solder mounting surface of the drain pins. R
ӨJA
is guaranteed by design while R
ӨCA
is
determined by the user’s board design.
TSM850N06CX
Taiwan Semiconductor
2 Version: B1607
ELECTRICAL SPECIFICATIONS (T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
SYMBOL
MIN
TYP
MAX
UNIT
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250µA
BV
DSS
60
--
--
V
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250µA
V
GS(TH)
1.2
1.8
2.5
V
Gate-Source Leakage Current
V
GS
= ±20V, V
DS
= 0V
I
GSS
--
--
±100
nA
Drain-Source Leakage Current
V
GS
= 0V, V
DS
= 60V
I
DSS
--
--
1
µA
V
GS
= 0V, V
DS
= 60V
T
J
= 125°C
--
--
100
Drain-Source On-State Resistance
(Note 2)
V
GS
= 10V, I
D
= 2.3A
R
DS(on)
--
68
85
mΩ
V
GS
= 4.5V, I
D
= 2.3A
--
80
100
Forward Transconductance
(Note 2)
V
DS
= 5V, I
D
= 2.3A
g
fs
--
6.7
--
S
Dynamic
(Note 3)
Total Gate Charge
V
GS
= 10V, V
DS
= 30V,
I
D
= 2.3A
Q
g
--
9.5
--
nC
Total Gate Charge
V
GS
= 4.5V, V
DS
= 30V,
I
D
= 2.3A
Q
g
--
4.6
--
Gate-Source Charge
Q
gs
--
1.9
--
Gate-Drain Charge
Q
gd
--
1.6
--
Input Capacitance
V
GS
= 0V, V
DS
= 30V
f = 1.0MHz
C
iss
--
529
--
pF
Output Capacitance
C
oss
--
29
--
Reverse Transfer Capacitance
C
rss
--
3
--
Gate Resistance
f = 1.0MHz, open drain
R
g
--
1.5
--
Ω
Switching
(Note 3)
Turn-On Delay Time
V
GS
= 10V, V
DS
= 30V,
I
D
= 2.3A, R
G
= 2Ω
t
d(on)
--
4.8
--
ns
Turn-On Rise Time
t
r
--
20
--
Turn-Off Delay Time
t
d(off)
--
9.8
--
Turn-Off Fall Time
t
f
--
17
--
Source-Drain Diode
Forward Voltage
(Note 2)
V
GS
= 0V, I
S
= 2.3A
V
SD
--
--
1
V
Reverse Recovery Time
I
S
= 2.3A,
dI/dt = 100A/μs
t
rr
--
12
--
ns
Reverse Recovery Charge
Q
rr
--
8
--
nC
Notes:
1. Silicon limited current only.
2. Pulse test: Pulse Width ≤ 300µs, duty cycle ≤ 2%.
3. Switching time is essentially independent of operating temperature.
ORDERING INFORMATION
PART NO.
PACKAGE
PACKING
TSM850N06CX RFG
SOT-23
3,000pcs / 7” Reel
TSM850N06CX
Taiwan Semiconductor
3 Version: B1607
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate-Source Voltage vs. Gate Charge
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
I
D
, Drain Current (A)
V
GS
, Gate to Source Voltage (V)
I
D
, Drain Current (A)
V
DS
, Drain to Source Voltage (V)
R
DS(ON)
, Drain-Source On-Resistance (Ω)
I
D
, Drain Current (A)
V
GS
, Gate to Source Voltage (V)
Q
g
, Gate Charge (nC)
R
DS(on)
, Drain-Source On-Resistance
(Normalized)
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain-Source On-Resistance (Ω)
V
GS
, Gate to Source Voltage (V)
0
2
4
6
8
10
0 1 2 3 4
V
GS
=10V
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
V
GS
=4V
V
GS
=3V
V
GS
=3.5V
0
0.02
0.04
0.06
0.08
0.1
0.12
0 2 4 6 8 10
V
GS
=10V
V
GS
=4.5V
0.05
0.06
0.07
0.08
0.09
0.1
3 4 5 6 7 8 9 10
I
D
=2.3A
0
2
4
6
8
10
0 1 2 3 4
25℃
-55℃
150℃
0
2
4
6
8
10
0 2 4 6 8 10
V
DS
=30V
I
D
=2.3A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
-75 -50 -25 0 25 50 75 100 125 150
V
GS
=10V
I
D
=2.3A
P1-P3P4-P6

TSM850N06CX RFG

Mfr. #:
Buy TSM850N06CX RFG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET 60V N Channel Power Mosfet
Lifecycle:
New from this manufacturer.
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