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XBS104V14R-G
Schottky Barrier Diode, 1A, 40V Type
■PACKAGING INFORMATION
Ta=25℃
PRODUCT NAME DEVICE ORIENTATION
XBS104V14R-G SOD-123A(Halogen & Antimony free)
XBS104V14R SOD-123A
Ta=25℃
LIMITS
PARAMETER SYMBOL TEST CONDITIONS
MIN. TYP. MAX.
UNIT
VF1 I
F
=100mA - 0.23 0.315 V
VF2 I
F
=500mA - 0.30 0.385 V
Forward Voltage
V
F3 I
F
=1A - 0.365 0.41 V
Reverse Current IR V
R
=40V - 0.25 2 mA
Inter-Terminal Capacity Ct V
R
=1V , f=1MHz - 150 - pF
Reverse Recovery Time
*2
trr I
F
=I
R
=10mA , irr=1mA - 41 - ns
*2：trr measurement circuit
PARAMETER SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM 40 V
Reverse Voltage (DC) VR 40 V
Forward Current (Average) IF(AV) 1 A
Non Continuous
Forward Surge Current
*1
I
FSM 20 A
Junction Temperature Tj 125
℃
Storage Temperature Range Tstg
-55～+150 ℃
*1： Non continuous high amplitude 60Hz half-sine wave.
* When the IC is operated continuously under high load conditions such as high temperature,
high current and high voltage, it may have the case that reliability reduces drastically even if
under the absolute maximum ratings. Adequate “Derating” should be taken into
consideration while designing.
Forward Voltage : V
F
=0.365V (TYP.)
Forward Current : I
F(AV)
=1A
Repetitive Peak Reverse Voltage : V
RM
=40V
Environmentally Friendly : EU RoHS Compliant, Pb Free
■
BSOLUTE MAXIMUM RATINGS
■APPLICATIONS
●Rectification
●Protection against reverse connection of battery
■MARKING RULE
■PRODUCT NAME
■FEATURES
①: 0 (Product Number)
②: Assembl
Lot Numbe
ETR1610-002
■ELECTRICAL CHARACTERISTICS
Pulse Generatrix
Bias Device Under test
Oscillosco
e
Cathode Bar
SOD-123A
Unit : mm
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
