ZTX1147ASTOB

PNP SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 1 - JANUARY 1997

FEATURES

*V

CEO

= -12V

* 4 Amp Continuous Current

* 20 Amp pulse Current

* Low Saturation Voltage

* High Gain

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-15 V

Collector-Emitter Voltage V

CEO

-12 V

Emitter-Base Voltage V

EBO

-5 V

Peak Pulse Current I

CM

-20 A

Continuous Collector Current I

C

-4 A

Base Current I

B

-500 mA

Power Dissipation at T

amb

=25°C P

tot

1W

Operating and Storage Temperature

Range

T

j

:T

stg

-55 to +200 °C

ZTX1147A

C

B

E

E-Line

TO92 Compatible

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER SYMBOL

VALUE

UNIT CONDITIONS.

MIN. TYP. MAX.

Collector-Base

Breakdown Voltage

V

(BR)CBO

-15 -35 V

I

C

=-100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CES

-12 -25 V

I

C

=-100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

-12 -25 V I

C

=-10mA

Collector-Emitter

Breakdown Voltage

V

(BR)CEV

-12 -25 V

I

C

=-100µA, V

EB

=+1V

Emitter-Base Breakdown

Voltage

V

(BR)EBO

-5 -8.5 V

I

E

=-100µA

Collector Cut-Off Current I

CBO

-0.3 -100 nA V

CB

=-12V

Emitter Cut-Off Current I

EBO

-0.3 -100 nA V

EB

=-4V

Collector Emitter Cut-Off

Current

I

CES

-0.3 -100 nA V

CE

=-10V

Collector-Emitter

Saturation Voltage

V

CE(sat)

-25

-70

-90

-115

-175

-50

-110

-130

-170

-235

mV

mV

mV

mV

mV

I

C

=-0.1A, I

B

=-1mA*

I

C

=-0.5A, I

B

=-2.5mA*

I

C

=-1A, I

B

=-6mA*

I

C

=-2A, I

B

=-20mA*

I

C

=-4A, I

B

=-70mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-890 -1000 mV I

C

=-4A, I

B

=-70mA*

Base-Emitter Turn-On

Voltage

V

BE(on)

-830 -950 mV I

C

=-4A, V

CE

=-2V*

Static Forward Current

Transfer Ratio

h

FE

270

250

200

170

90

450

400

340

270

150

50

850

I

C

=-10mA, V

CE

=-2V*

I

C

=-0.5A, V

CE

=-2V*

I

C

=-2.0A, V

CE

=-2V*

I

C

=-4.0A, V

CE

=-2V*

I

C

=-10A, V

CE

=-2V*

I

C

=-20A, V

CE

=-2V*

Transition Frequency f

T

115 MHz I

C

=-50mA, V

CE

=-10V

f=50MHz

Out Capacitance C

cb

80 pF V

CB

=-10V, f=1MHz

Switching Times t

on

150 ns I

C

=-4A, I

B

=-40mA,

V

CC

=-10V

t

off

220 ns

I

C

=-4A, I

B

=±40mA,

V

CC

=-10V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

ZTX1147A

ZTX1147A

1m 100

1m 100

1m 100 100m 100

1001m

1m 100

IC - Collector Current (A)

V

CE(sat)

v I

C

0

1.0

VCE(sat) - (V)

IC/IB=10

IC/IB=50

IC/IB=100

+25°C

-55°C

h

FE

- Typical Gain

800

+100°C

0

IC - Collector Current (A)

hFE v IC

+25°C

+100°C

V

BE(on)

- (V)

1.5

-55°C

0

I

C

- Collector Current (A)

VBE(on) v IC

+100°C

VCE(sat) - (V)

1.0

+25°C

0

IC - Collector Current (A)

V

CE(sat)

v I

C

+100°C

VBE(sat) - (V)

1.8

0.9

+25°C

0

IC - Collector Current (A)

VBE(sat) v IC

1s

100ms

IC - Collector Current (A)

100

DC

10m

V

CE

- Collector Emitter Voltage (V)

Safe Operating Area

10ms

1ms

100us

VCE=2V

+25°C

-55°C

IC/IB=100

VCE=2V

-55° C

IC/IB=100

0.2

0.4

0.6

0.8

10m 100m 1 10

10m 100m 1 10

0.2

0.4

0.6

0.8

10m 100m 1 10

200

400

600

10m 100m 1 10

0.3

0.6

1.2

1.5

10m 100m 1 10

0.5

1.0

110

100m

1

10

IC/IB=200

TYPICAL CHARACTERISTICS

ZTX1147ASTOB

Mfr. #:

Buy ZTX1147ASTOB

Manufacturer:

Diodes Incorporated

Description:

Bipolar Transistors - BJT PNP High Gain & Crnt

Lifecycle:

New from this manufacturer.

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