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M30H100CTHE3_A/P

P1-P3P4-P5
MB30H90CT, MB30H100CT, MF30H100CT
www.vishay.com
Vishay General Semiconductor
Revision: 16-Nov-17
1
Document Number: 87737
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual Common Cathode High Voltage Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C (for D
2
PAK (TO-263AB) package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for ITO-220AB package)
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, and
polarity protection application.
MECHANICAL DATA
Case: ITO-220AB, D
2
PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
15 A x 2
V
RRM
90 V to 100 V
I
FSM
275 A
V
F
0.67 V
I
R
5.0 μA
T
J
max. 175 °C
Package ITO-220AB
, D
2
PAK (TO-263AB)
Diode variations Common cathode
1
2
3
ITO-220AB
MF30H100CT
MB30H90CT
MB30H100CT
PIN 2
PIN 1
PIN 3
PIN 1
PIN 2
K
HEATSINK
1
2
K
D
2
PAK (TO-263AB)
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MB30H90CT MB30H100CT UNIT
Maximum repetitive peak reverse voltage V
RRM
90 100
VWorking peak reverse voltage V
RWM
90 100
Maximum DC blocking voltage V
DC
90 100
Maximum average forward rectified current
(fig.1)
total device
I
F(AV)
30
A
per diode 15
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
275
Peak repetitive reverse surge current per diode
at t
p
= 2.0 μs, 1 kHz
I
RRM
1.0
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-65 to +175 °C
Isolation voltage (ITO-220AB only)
from terminal to heat sink t = 1 min
V
AC
1500 V
MB30H90CT, MB30H100CT, MF30H100CT
www.vishay.com
Vishay General Semiconductor
Revision: 16-Nov-17
2
Document Number: 87737
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width, 40 ms
Note
(1)
AEC-Q101 qualified
(2)
90 V device available in D
2
PAK (TO-263AB) package only
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS VALUE UNIT
Maximum instantaneous forward voltage per diode V
F
(1)
I
F
= 15 A T
J
= 25 °C 0.82
V
I
F
= 15 A T
J
= 125 °C 0.67
I
F
= 30 A T
J
= 25 °C 0.93
I
F
= 30 A T
J
= 125 °C 0.80
Maximum reverse current per diode I
R
(2)
Rated V
R
T
J
= 25 °C 5.0 μA
T
J
= 125 °C 6.0 mA
THERMAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MB MF UNIT
Typical thermal resistance per diode R
JC
1.9 4.6 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
ITO-220AB MF30H100CTHE3_A/P
(1)
1.99 P 50/tube Tube
TO-263AB MB30H100CTHE3_A/P
(1)(2)
1.35 P 50/tube Tube
TO-263AB MB30H100CTHE3_A/I
(1)(2)
1.35 I 800/reel Tape and reel
MB30H90CT, MB30H100CT, MF30H100CT
www.vishay.com
Vishay General Semiconductor
Revision: 16-Nov-17
3
Document Number: 87737
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
C
= 25 °C unless otherwise noted)
Fig. 1 - Forward Derating Curve Per Diode
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
5
10
15
20
25
30
35
7550250 100 125 150 175
MF
MB
Average Forward Current (A)
Case Temperature (°C)
0
50
100
150
200
250
300
1
10
100
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
0.10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
100
10
0.1
0.01
1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 100 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
1
0.1
10
100
1000
10 000
0.01
20 10040 60 80
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 100 °C
T
J
= 150 °C
T
J
= 125 °C
T
J
= 175 °C
T
J
= 25 °C
101
100
100
10 000
0.1
10
1000
Reverse Voltage (V)
Junction Capacitance (pF)
0.1
0.10.01
1
1
10
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

M30H100CTHE3_A/P

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Buy M30H100CTHE3_A/P
Manufacturer:
Vishay
Description:
DIODE ARRAY SCHOTTKY 100V TO220
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