EM6K1T2R Datasheet EM6K1T2R | P1-P3

EM6K1

Transistor

Rev.C 1/3

2.5V Drive

Nch+Nch

MOS FET

EM6K1

zStructure

Silicon N-channel MOS FET

zFeatures

1) Two 2SK3019 transistors in a single EMT package.

2) The MOS FET elements are independent, eliminating

mutual interference.

3) Mounting cost and area can be cut in half.

4) Low on-resistance.

5) Low voltage drive (2.5V) makes this device ideal for

portable equipment.

zApplications

zExternal dimensions (Unit : mm)

Each lead has same dimensions

EMT6

0.22

1.2

1.6

(

1

)

(

2

)

(

5

)

(

3

)

(

6

)

(

4

)

0.13

0.5

1.0

1.6

1pin mark

Abbreviated symbol : K1

Interfacing, switching (30V, 100mA)

zPackaging specifications zEquivalent circuit

Taping

EM6K1

Type

T2R

8000

Package

Basic ordering unit

(pieces)

Code

zAbsolute maximum ratings (Ta=25°C)

Parameter

V

mA

mW / TOTAL

°C

mA

°C

V

DSS

VGSS

PD

Tch

I

D

IDP

Tstg

Symbol

30

±20

±100

±400

150

mW / ELEMENT120

150

−55 to +150

Limits Unit

∗1 Pw≤10µs, Duty cycle≤1%

∗2 With each pin mounted on the recommended lands.

Drain−source voltage

Gate−source voltage

Drain current

Total power dissipation

Channel temperature

Storage temperature

Continuous

Pulsed

∗1

∗2

(1)

∗

Gate

Protection

Diode

Tr1

Tr2

Gate

Protection

Diode

∗

∗ A protection diode has been built in between the gate and

the source to protect against static electricity when the product

is in use. Use the protection circuit when rated voltages are exceeded.

(1)Tr1 Sourc

e

(2)Tr1 Gate

(3)Tr2 Drain

(4)Tr2 Sourc

e

(5)Tr2 Gate

(6)Tr1 Drain

(2) (3)

(4)(5)(6)

EM6K1

Transistor

Rev.C 2/3

zElectrical characteristics (Ta=25°C)

Parameter Symbol

I

GSS

V

(BR)DSS

I

DSS

V

GS(th)

R

DS(on)

R

DS(on)

Ciss

Y

fs

Coss

Crss

Min.

−

30

−

0.8

−

20

−

5

13

−

9

4

±1

−

1.0

1.5

8

−

713

−

µAV

GS

=

±20V, V

DS

=

0V

I

D

=

10µA, V

GS

=

0V

V

DS

=

30V, V

GS

=

0V

V

DS

=

3V, I

D

=

10mA

V

DS

=

3V, I

D

=

100µA

I

D

=

10mA, V

GS

=

4V

I

D

=

1mA, V

GS

=

2.5V

V

DS

=

5V

V

GS

=

0V

f

=

1MHz

V

µA

V

Ω

pF

mS

pF

t

d(on)

−

15

−

I

D

=

10mA, V

DD

5V

ns

t

r

−

35

−

V

GS

=

5V

ns

t

d(off)

−

80

−

R

L

=

500Ω

ns

t

f

−

80

−

R

G

=

10Ω

ns

Typ. Max. Unit Conditions

Gate−source leakage

Gate threshold voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn−on delay time

Turn−off delay time

Rise time

Fall time

Drain−source breakdown voltage

Static drain−source on−starte

resistance

Zero gate voltage drain current

zElectrical characteristic curves

01 234

5

0

0.05

0.1

0.15

DRAIN CURRENT : I

D

(A)

DRAIN-SOURCE VOLTAGE : V

DS

(V)

3V

3.5V

2.5V

V

GS

=1.5V

4V

2V

Fig.1 Typical Output Characteristic

s

04

0.1m

100m

DRAIN CURRENT : I

D

(A)

GATE-SOURCE VOLTAGE : V

GS

(V)

1

10m

3

2

1m

0.2m

0.5m

2m

5m

50m

20m

200m

V

DS

=3V

Pulsed

Ta=125°C

75°C

25°C

−25°C

Fig.2 Typical Transfer Characteristic

s

−50 0

0

1

1.5

2

GATE THRESHOLD VOLTAGE : V

GS

(th) (V

)

CHANNEL TEMPERATURE : Tch (°C)

0.5

−25 25 50 75 100 125 15

0

V

DS

=3V

I

D

=0.1mA

Fig.3 Gate Threshold Voltage vs

.

Channel Temperature

0.001

1

2

50

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

DS

(on

) (Ω)

DRAIN CURRENT : I

D

(A)

0.5

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.

5

10

20

V

GS

=4V

Pulsed

Ta=125

°C

75

°C

25

°C

−25

°C

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current (Ι

)

0.001

1

2

50

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

DS

(on) (Ω)

DRAIN CURRENT : I

D

(A)

0.5

0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.

5

10

20

V

GS

=2.5V

Pulsed

Ta=125°C

75°C

25°C

−25°C

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current (ΙΙ

)

0 5 10 15 2

0

5

10

15

GATE-SOURCE VOLTAGE : V

GS

(

V)

I

D

=0.1A

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

DS

(on

) (Ω)

Ta=25

°C

Pulsed

I

D

=0.05A

Fig.6 Static Drain-Source On-State

Resistance vs. Gate-Source

Voltage

EM6K1

Transistor

Rev.C 3/3

−50

0 25 15

0

3

6

9

CHANNEL TEMPERATURE : Tch (

°C)

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

DS

(on

) (Ω)

−25 50 75 100 125

2

1

4

5

7

8

V

GS

=4V

Pulsed

I

D

=100mA

I

D

=50mA

Fig.7 Static Drain-Source On-Sta

te

Resistance vs.

Channel Temperature

0.0001

0.001

0.01

0.02

0.5

FORWARD TRANSFER

ADMITTANCE : ⏐ Yfs ⏐(S)

DRAIN CURRENT : I

D

(A)

0.005

0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05

0.05

0.1

0.2

0.1 0.2 0

.5

0.002

V

DS

=3V

Pulsed

Ta=−25°C

75°C

25°C

125°C

Fig.8 Forward Transfer Admittanc

e

vs. Drain Current

200m

REVERCE DRAIN CURRENT : I

DR

(A)

SOURCE-DRAIN VOLTAGE : V

SD

(V)

1

.5

10.50

100m

50m

20m

10m

5m

2m

1m

0.5m

0.2m

0.1m

V

GS

=0V

Pulsed

Ta=125°C

75°C

25°C

−25°C

Fig.9 Reverse Drain Current vs

.

Source-Drain Voltage (Ι)

200m

REVERCE DRAIN CURRENT : I

DR

(A)

SOURCE-DRAIN VOLTAGE : V

SD

(V)

1

.5

10.50

100m

50m

20m

10m

5m

2m

1m

0.5m

0.2m

0.1m

Ta=25°C

Pulsed

V

GS

=4V

0V

Fig.10 Reverse Drain Current vs

.

Source-Drain Voltage (ΙΙ

)

0.1

1

2

50

CAPACITANCE : C (pF)

DRAIN-SOURCE VOLTAGE : V

DS (V)

0.5

0.2 0.5 1 2 5 10 20 5

0

5

10

20

C

iss

C

oss

C

rss

Ta=25°C

f=1MH

Z

V

GS

=0V

Pulsed

Fig.11 Typical Capacitance vs.

Drain-Source Voltage

0.1

10

20

500

SWITHING TIME : t (ns)

DRAIN CURRENT : ID (mA)

5

0.2 0.5 1 2 5 10 20 50

50

100

200

1000

2

10

0

Ta=25°C

VDD=5V

V

GS=5V

R

G=10Ω

td(off)

tr

td(on)

tf

Fig.12 Switching Characteristics

zSwitching characteristics measurement circuits

Fig.13 Switching Time Test Circuit

V

GS

R

G

V

D

S

D.U.T.

I

D

R

L

V

DD

90%

50%

10%

90%

10%

50%

Pulse Width

10%

V

GS

V

DS

90%

t

f

t

off

t

d(off)

t

r

t

on

t

d(on)

Fig.14 Switching Time Waveforms

EM6K1T2R

EM6K1T2R

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