BSS123LT1G Datasheet BSS123LT1G, BVSS123LT1G, BSS123LT3G | P1-P3

October, 2016 − Rev. 10

1 Publication Order Number:

BSS123LT1/D

BSS123LT1G,

BVSS123LT1G

Power MOSFET

170 mAmps, 100 Volts

N−Channel SOT−23

Features

• BVSS Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain−Source Voltage V

DSS

100 Vdc

Gate−Source Voltage

− Continuous

− Non−repetitive (t

p

≤ 50 ms)

V

GS

V

GSM

± 20

± 40

Vdc

Vpk

Drain Current

− Continuous (Note 1)

− Pulsed (Note 2)

I

D

I

DM

0.17

0.68

Adc

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 3) T

A

= 25°C

Derate above 25°C

P

D

225

1.8

mW

mW/°C

Thermal Resistance,

Junction−to−Ambient

R

q

JA

556 °C/W

Junction and Storage Temperature T

J

, T

stg

−55 to +150 °C

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Width v 300 ms, Duty Cycle v 2.0%.

3. FR−5 = 1.0  0.75  0.062 in.

3

1

2

N−Channel

SOT−23

CASE 318

STYLE 21

MARKING DIAGRAM

& PIN ASSIGNMENT

SA MG

G

SA = Device Code

M = Date Code

G = Pb−Free Package

3

21

Drain

Gate

2

1

3

Source

170 mAMPS

100 VOLTS

R

DS(on)

= 6 W

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

(*Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

www.onsemi.com

BSS123LT1G, BVSS123LT1G

www.onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic

Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(V

GS

= 0, I

D

= 250 mAdc)

V

(BR)DSS

100 − − Vdc

Zero Gate Voltage Drain Current

(V

GS

= 0, V

DS

= 100 Vdc) T

J

= 25°C

T

J

= 125°C

I

DSS

−

15

60

mAdc

Gate−Body Leakage Current

(V

GS

= 20 Vdc, V

DS

= 0)

I

GSS

− − 50 nAdc

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

(V

DS

= V

GS

, I

D

= 1.0 mAdc)

V

GS(th)

1.6 − 2.6 Vdc

Static Drain−Source On−Resistance

(V

GS

= 10 Vdc, I

D

= 100 mAdc)

r

DS(on)

− − 6.0

W

Forward Transconductance

(V

DS

= 25 Vdc, I

D

= 100 mAdc)

g

fs

80 − − mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

DS

= 25 Vdc, V

GS

= 0, f = 1.0 MHz)

C

iss

− 20 − pF

Output Capacitance

(V

DS

= 25 Vdc, V

GS

= 0, f = 1.0 MHz)

C

oss

− 9.0 − pF

Reverse Transfer Capacitance

(V

DS

= 25 Vdc, V

GS

= 0, f = 1.0 MHz)

C

rss

− 4.0 − pF

SWITCHING CHARACTERISTICS

(4)

Turn−On Delay Time

(V

CC

= 30 Vdc, I

C

= 0.28 Adc,

V

GS

= 10 Vdc, R

GS

= 50 W)

t

d(on)

− 20 − ns

Turn−Off Delay Time t

d(off)

− 40 − ns

REVERSE DIODE

Diode Forward On−Voltage

(I

D

= 0.34 Adc, V

GS

= 0 Vdc)

V

SD

− − 1.3 V

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION

Device Package Shipping

†

BSS123LT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

BSS123LT3G SOT−23

(Pb−Free)

10000 / Tape & Reel

BVSS123LT1G* SOT−23

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable.

BSS123LT1G, BVSS123LT1G

www.onsemi.com

3

TYPICAL ELECTRICAL CHARACTERISTICS

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V) V

GS

, GATE−TO−SOURCE VOLTAGE (V)

97653210

0

0.2

0.4

0.6

1.0

1.2

1.4

1.6

654321

0

0.2

0.4

0.6

0.8

1.2

1.4

1.6

Figure 3. On−Resistance vs. Drain Current and

Gate Voltage

Figure 4. Capacitance Variation

I

D

, DRAIN CURRENT (mA) V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

20018016014012010080

2.25

2.50

2.75

3.00

3.25

3.50

1009080704030200

0

10

20

30

40

50

Figure 5. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

Figure 6. Diode Forward Voltage vs. Current

Q

G

, TOTAL GATE CHARGE (nC) V

SD

, SOURCE−TO−DRAIN VOLTAGE (V)

76543210

0

2

4

6

8

10

1.21.00.80.60.40.20

0.0001

0.001

0.01

0.1

1

I

D

, DRAIN CURRENT (A)

I

D

, DRAIN CURRENT (A)

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (W)

C, CAPACITANCE (pF)

V

GS

, GATE−TO−SOURCE VOLTAGE (V)

I

S

, SOURCE CURRENT (A)

4810

0.8

V

GS

= 10 V

T

J

= 25°C

3 V

4 V

5 V

6 V

8 V

T

J

= 25°C

V

DS

= 10 V

T

J

= −55°C

T

J

= 150°C

1.0

T

J

= 25°C

V

GS

= 4.5 V

V

GS

= 10 V

605010

T

J

= 25°C

V

GS

= 0

C

iss

C

oss

C

rss

8

Q

T

Q

GS

Q

GD

V

GS

= 0 V

T

J

= 25°C T

J

= −55°CT

J

= 125°C

T

J

= 25°C

V

GS

= 10 V

V

DS

= 30 V

I

D

= 0.2 A

BSS123LT1G

BSS123LT1G

Products related to this Datasheet