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NGD15N41CLT4

P1-P3P4-P6P7-P9P10-P11
© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 8
1 Publication Order Number:
NGD15N41CL/D
NGD15N41CL,
NGD15N41ACL,
NGB15N41CL,
NGB15N41ACL,
NGP15N41CL,
NGP15N41ACL
Ignition IGBT 15 A, 410 V
N−Channel DPAK, D
2
PAK and TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug Applications
• DPAK Package Offers Smaller Footprint and Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (R
G
) and Gate−Emitter Resistor (R
GE
)
• These are Pb−Free Devices
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector−Emitter Voltage V
CES
440 V
DC
Collector−Gate Voltage V
CER
440 V
DC
Gate−Emitter Voltage V
GE
15 V
DC
Collector Current−Continuous
@ T
C
= 25°C − Pulsed
I
C
15
50
A
DC
A
AC
ESD (Human Body Model)
R = 1500 Ω, C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 Ω, C = 200 pF ESD 800 V
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
107
0.71
Watts
W/°C
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
15 AMPS
410 VOLTS
V
CE(on)
3 2.1 V @
I
C
= 10 A, V
GE
. 4.5 V
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
See general marking information in the device marking
section on page 8 of this data sheet.
DEVICE MARKING INFORMATION
TO−220AB
CASE 221A
STYLE 9
1
2
3
4
1
2
3
4
D
2
PAK
CASE 418B
STYLE 4
DPAK
CASE 369C
STYLE 2
http://onsemi.com
1
2
3
4
C
E
G
R
G
R
GE
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
http://onsemi.com
2
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ T
J
≤ 175°C)
Characteristic Symbol Value Unit
Single Pulse Collector−to−Emitter Avalanche Energy
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 16.6 A, L = 1.8 mH, Starting T
J
= 25°C
V
CC
= 50 V, V
GE
= 5.0 V, Pk I
L
= 15 A, L = 1.8 mH, Starting T
J
= 125°C
E
AS
250
200
mJ
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R
θ
JC
1.4 °C/W
Thermal Resistance, Junction to Ambient DPAK (Note 1) R
θ
JA
100
D
2
PAK (Note 1) R
θ
JA
50
TO−220 R
θ
JA
62.5
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds T
L
275 °C
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage BV
CES
I
C
= 2.0 mA T
J
= −40°C to
150°C
380 410 440 V
DC
I
C
= 10 mA T
J
= −40°C to
150°C
380 410 440
Zero Gate Voltage Collector Current I
CES
V
CE
= 350 V,
V
GE
= 0 V
T
J
= 25°C − 2.0 20
μA
DC
T
J
= 150°C − 10 40*
T
J
= −40°C − 1.0 10
Reverse Collector−Emitter Leakage Current I
ECS
V
CE
= −24 V
T
J
= 25°C − 0.7 2.0
mA
T
J
= 150°C − 12 25*
T
J
= −40°C − 0.1 1.0
Reverse Collector−Emitter Clamp Voltage B
VCES(R)
I
C
= −75 mA
T
J
= 25°C 27 33 37
V
DC
T
J
= 150°C 30 36 40
T
J
= −40°C 25 31 35
Gate−Emitter Clamp Voltage BV
GES
I
G
= 5.0 mA T
J
= −40°C to
150°C
11 13 15 V
DC
Gate−Emitter Leakage Current I
GES
V
GE
= 10 V T
J
= −40°C to
150°C
384 640 1000 μA
DC
Gate Resistor R
G
− T
J
= −40°C to
150°C
− 70 −
Ω
Gate Emitter Resistor R
GE
− T
J
= −40°C to
150°C
10 16 26
k
Ω
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GE(th)
I
C
= 1.0 mA,
V
GE
= V
CE
T
J
= 25°C 1.1 1.4 1.9
V
DC
T
J
= 150°C 0.75 1.0 1.4
T
J
= −40°C 1.2 1.6 2.1*
Threshold Temperature Coefficient
(Negative)
− − − − 3.4 − mV/°C
1. When surface mounted to an FR4 board using the minimum recommended pad size.
2. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
Symbol Test Conditions Temperature Min Typ Max Unit
ON CHARACTERISTICS (continued) (Note 3)
Collector−to−Emitter On−Voltage
V
CE(on)
I
C
= 6.0 A,
V
GE
= 4.0 V
T
J
= 25°C 1.0 1.6 1.8
V
DC
T
J
= 150°C 0.9 1.5 1.8
T
J
= −40°C 1.1 1.65 1.9*
I
C
= 8.0 A,
V
GE
= 4.0 V
T
J
= 25°C 1.3 1.8 2.0*
T
J
= 150°C 1.2 1.7 1.9
T
J
= −40°C 1.4 1.8 2.0*
I
C
= 10 A,
V
GE
= 4.0 V
T
J
= 25°C 1.4 2.0 2.2
T
J
= 150°C 1.5 2.0 2.3*
T
J
= −40°C 1.4 2.0 2.2
I
C
= 10 A,
V
GE
= 4.5 V
T
J
= 25°C 1.3 1.9 2.1
T
J
= 150°C 1.3 1.9 2.1
T
J
= −40°C 1.4 1.95 2.1*
Forward Transconductance gfs V
CE
= 5.0 V, I
C
= 6.0 A T
J
= −40°C to
150°C
8.0 15 25 Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance C
ISS
V
CC
= 25 V, V
GE
= 0 V
f = 1.0 MHz
T
J
= −40°C to
150°C
400 650 1000
pF
Output Capacitance C
OSS
30 55 100
Transfer Capacitance C
RSS
3.0 4.5 8.0
SWITCHING CHARACTERISTICS
Turn−Off Delay Time (Inductive) t
d(off)
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, L = 300 μH
T
J
= 25°C − 4.0 10
μSec
T
J
= 150°C − 4.5 10
Fall Time (Inductive) t
f
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, L = 300 μH
T
J
= 25°C − 6.0 12
T
J
= 150°C − 10 12
Turn−Off Delay Time (Resistive) t
d(off)
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, R
L
= 46 Ω,
T
J
= 25°C − 3.0 10
μSec
T
J
= 150°C − 3.5 10
Fall Time (Resistive) t
f
V
CC
= 300 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, R
L
= 46 Ω,
T
J
= 25°C − 8.0 15
T
J
= 150°C − 12 15
Turn−On Delay Time t
d(on)
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, R
L
= 1.5 Ω
T
J
= 25°C − 0.7 4.0
μSec
T
J
= 150°C − 0.7 4.0
Rise Time t
r
V
CC
= 10 V, I
C
= 6.5 A
R
G
= 1.0 kΩ, R
L
= 1.5 Ω
T
J
= 25°C − 4.0 7.0
T
J
= 150°C − 5.0 7.0
3. Pulse Test: Pulse Width v 300 μS, Duty Cycle v 2%.
*Maximum Value of Characteristic across Temperature Range.
P1-P3P4-P6P7-P9P10-P11

NGD15N41CLT4

Mfr. #:
Buy NGD15N41CLT4
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 15A 410V Ignition
Lifecycle:
New from this manufacturer.
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