NGD15N41CLT4G

NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
GATE TO EMITTER VOLTAGE (VOLTS)
0
40
6
10
42
I
C,
COLLECTOR CURRENT (AMPS)
0
60
20
30
50
813570
40
6
10
42
I
C,
COLLECTOR CURRENT (AMPS)
0
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics Figure 2. Output Characteristics
0
25
20
15
10
21.51
5
30
0
0.5 2.5 3 3.5
Figure 3. Output Characteristics
V
GE
, GATE TO EMITTER VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
I
C,
COLLECTOR CURRENT (AMPS)
Figure 5. CollectortoEmitter Saturation
Voltage versus Junction Temperature
Figure 6. CollectortoEmitter Voltage versus
GatetoEmitter Voltage
60
V
GE
= 10 V
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
20
30
50
81357
5 V
T
J
= 25°C T
J
= 40°C
V
GE
= 10 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
T
J
= 150°C
4 4.5 5
4.5 V
4 V
3.5 V
3 V
2.5 V
0
40
6
10
42
I
C,
COLLECTOR CURRENT (AMPS)
0
60
20
30
50
81357
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
T
J
= 150°C
V
GE
= 10 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
2.5
T
J
, JUNCTION TEMPERATURE (°C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
50 50 75250 10025 125
1.0
3.0
0.5
2.0
0.0
3.5
4.0
1.5
150
V
GE
= 5 V
I
C
= 25 A
I
C
= 20 A
I
C
= 15 A
I
C
= 10 A
I
C
= 5 A
2.5
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
3675849
1
0.5
2
0
3
1.5
10
I
C
= 15 A
I
C
= 10 A
I
C
= 5 A
V
CE
= 10 V
T
J
= 25°C
T
J
= 40°C
T
J
= 25°C
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
http://onsemi.com
5
TEMPERATURE (°C)
THRESHOLD VOLTAGE (VOLTS)
50 50 701010 9030 130 150
Mean + 4 σ
Mean 4 σ
Mean
GATE TO EMITTER VOLTAGE (VOLTS)
1.2
0.2
0
2
0.6
1
1.6
10000
1000
100
10
0
6
4
0
8
10
12
Figure 7. CollectortoEmitter Voltage versus
GatetoEmitter Voltage
Figure 8. Capacitance Variation
Figure 9. Gate Threshold Voltage versus
Temperature
Figure 10. Minimum Open Secondary Latch
Current versus Temperature
TEMPERATURE (°C)
I
L
, LATCH CURRENT (AMPS)
Figure 11. Typical Open Secondary Latch
Current versus Temperature
V
CE
, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
Figure 12. Inductive Switching Fall Time
versus Temperature
TEMPERATURE (°C)
C, CAPACITANCE (pF)
SWITCHING TIME (μs)
0 120604020 140 180
50 50 75250 10025 125
10
20
5
15
0
25
30
T
J
= 150°C
175
V
CC
= 50 V
V
GE
= 5 V
R
G
= 1000 Ω
L = 6 mH
20080 100 160
50 50 703010 9030 130 150
t
f
V
CC
= 300 V
V
GE
= 5 V
R
G
= 1000 Ω
I
C
= 10 A
L = 300 μH
C
rss
C
iss
C
oss
2.5
3675849
1
0.5
2
0
3
1.5
10
I
C
= 15 A
I
C
= 10 A
I
C
= 5 A
COLLECTOR TO EMITTER VOLTAGE (VOLTS)
1
30 110
0.4
0.8
1.4
1.8
150
L = 3 mH
L = 2 mH
TEMPERATURE (°C)
I
L
, LATCH CURRENT (AMPS)
50 50 75250 10025 125
10
20
5
15
0
25
30
175
V
CC
= 50 V
V
GE
= 5 V
R
G
= 1000 Ω
L = 6 mH
150
L = 3 mH
L = 2 mH
2
10 110
t
d(off)
NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL,
NGP15N41ACL
http://onsemi.com
6
0.2
0.00001 0.0010.0001 0.1
10
1
0.01
0.01
t,TIME (S)
R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
Single Pulse
110
0.1
0.05
0.02
0.01
100 1000
Duty Cycle = 0.5
0.1
Figure 13. Transient Thermal Resistance
(Nonnormalized JunctiontoAmbient mounted on
fixture in Figure 14)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T
1
T
J(pk)
T
A
= P
(pk)
R
θ
JA
(t)
R
θ
JC
R(t) for t 0.2 s
4
1.5
4
4
0.125
Figure 14. Test Fixture for Transient Thermal Curve
(48 square inches of 1/8, thick aluminum)

NGD15N41CLT4G

Mfr. #:
Manufacturer:
Littelfuse
Description:
IGBT Transistors 15A 410V Ignition
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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