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NTMFS4744NT3G

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 5
1 Publication Order Number:
NTMFS4744N/D
NTMFS4744N
Power MOSFET
30 V, 53 A, Single N−Channel, SO−8 FL
Features
• Low R
DS(on)
to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 V
Gate−to−Source Voltage V
GS
20 V
Continuous Drain
Current R
q
JA
(Note 1)
Steady
State
T
A
= 25°C
I
D
11
A
T
A
= 85°C 8.0
Power Dissipation
R
q
JA
(Note 1)
T
A
= 25°C P
D
2.2 W
Continuous Drain
Current R
q
JA
(Note 2)
T
A
= 25°C
ID
7.0
A
T
A
= 85°C 5.0
Power Dissipation
R
q
JA
(Note 2)
T
A
= 25°C P
D
0.88 W
Continuous Drain
Current R
q
JC
(Note 1)
T
C
= 25°C
I
D
53
A
T
C
= 85°C 38
Power Dissipation
R
q
JC
(Note 1)
T
C
= 25°C P
D
47.2 W
Pulsed Drain
Current
t
p
=10ms
T
A
= 25°C I
DM
106 A
Operating Junction and Storage Temperature T
J
, T
STG
−55 to
+150
°C
Source Current (Body Diode) I
S
46 A
Drain to Source dV/dt dV/dt 6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (V
DD
= 50 V, V
GS
= 10 V,
I
L
= 24 A
pk
, L = 1.0 mH, R
G
= 25 W)
EAS 286 mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
MARKING
DIAGRAM
1
4744N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
N−Channel
D
S
G
30 V
14 mW @ 4.5 V
10 mW @ 10 V
R
DS(on)
MAX
53 A
I
D
MAXV
(BR)DSS
4744N
AYWZZ
S
S
S
G
D
D
D
D
Device Package Shipping
†
ORDERING INFORMATION
NTMFS4744NT1G SO−8 FL
(Pb−Free)
1500 Tape & Reel
NTMFS4744NT3G 5000 Tape & ReelSO−8 FL
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NTMFS4744N
http://onsemi.com
2
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case (Drain)
R
q
JC
2.65
°C/W
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
56.9
Junction−to−Ambient – Steady State (Note 2)
R
q
JA
142.4
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
30 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/
T
J
10
mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25 °C 1.0
mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= 20 V 100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
1.5 2.5 V
Negative Threshold Temperature Coefficient V
GS(TH)
/T
J
5.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 10 V to
11.5 V
I
D
= 30 A 7.6
mW
I
D
= 15 A 7.3
I
D
= 10 A 7.3 10
V
GS
= 4.5 V
I
D
= 30 A 10.4
I
D
= 15 A 10.1
I
D
= 10 A 9.9 14
Forward Transconductance g
FS
V
DS
= 15 V, I
D
= 15 A 25 S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance C
ISS
V
GS
= 0 V, f = 1 MHz, V
DS
= 12 V
1300
pF
Output Capacitance C
OSS
550
Reverse Transfer Capacitance C
RSS
132
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
10 17
nC
Threshold Gate Charge Q
G(TH)
0.9
Gate−to−Source Charge Q
GS
1.8
Gate−to−Drain Charge Q
GD
5.9
Total Gate Charge Q
G(TOT)
V
GS
= 11.5 V, V
DS
= 15 V;
I
D
= 30 A
25 37
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time t
d(ON)
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 30 A,
R
G
= 3.0 W
12
ns
Rise Time t
r
203
Turn−Off Delay Time t
d(OFF)
14
Fall Time t
f
83
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTMFS4744N
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter UnitMaxTypMinTest ConditionSymbol
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
t
d(ON)
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 30 A, R
G
= 3.0 W
7.0
ns
Rise Time t
r
94
Turn−Off Delay Time t
d(OFF)
23
Fall Time t
f
4.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C 0.78 1.2
V
T
J
= 125°C 0.7
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
S
/dt = 100 A/ms,
I
S
= 30 A
37 60
ns
Charge Time t
a
21
Discharge Time t
b
17
Reverse Recovery Charge Q
RR
37 nC
PACKAGE PARASITIC VALUES
Source Inductance L
S
T
A
= 25°C
0.65
nH
Drain Inductance L
D
0.005
Gate Inductance L
G
1.84
Gate Resistance R
G
2.0 5.0
W
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
P1-P3P4-P6P7-P7

NTMFS4744NT3G

Mfr. #:
Buy NTMFS4744NT3G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET 30V 53A 10MOHM
Lifecycle:
New from this manufacturer.
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