NTMFS4744NT1G

NTMFS4744N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
10 V
10
0.020
30
0.004
0
1.4
1.0
0.6
100
1000
05
16
21
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
2.6
0.1
3
0.04
0
3.4
Figure 3. OnResistance vs. GatetoSource
Voltage
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 4. OnResistance vs. Drain Current and
Temperature
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
R
DS(on)
, DRAINTOSOURCE RESISTANCE (W)
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. DraintoSource Leakage Current
vs. Drain Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAINTOSOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
50 5025025 75 125100
23
1812 300
3
T
J
= 25°C
T
J
= 55°C
T
J
= 125°C
I
D
= 9 A
V
GS
= 10 V
T
J
= 85°C
T
J
= 125°C
24
0
45
T
J
= 25°C
24
0.1
3 V
1.8
6
10
4 10
50
0.012
4.5 V
2.4 V
2.6 V
2.8 V
24
8
32
16
32
8
T
J
= 125°C
3.8
4.2
4.6
0.02
0.06
0.08
255
V
GS
= 10 V
150
1
3.5 V
T
J
= 25°C
0.016
15 20
T
J
= 55°C
0.008
1.2
0.8
1.6
6
T
J
= 25°C
I
D
= 30 A
NTMFS4744N
http://onsemi.com
5
TYPICAL PERFORMANCE CURVES
C
rss
0 8 12 20
GATETOSOURCE OR DRAINTOSOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
Figure 7. Capacitance Variation
800
0
1600
4
V
GS
= 0 V
T
J
= 25°C
C
oss
C
iss
1200
2000
Figure 8. GateToSource and DrainToSource
Voltage vs. Total Charge
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
0
1
0
Q
G
, TOTAL GATE CHARGE (nC)
5
2
84
I
D
= 30 A
T
J
= 25°C
12
0.1
0.2
V
SD
, SOURCETODRAIN VOLTAGE (VOLTS)
I
S
, SOURCE CURRENT (AMPS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
R
G
, GATE RESISTANCE (OHMS)
1 10 100
1000
1
t, TIME (ns)
V
GS
= 0 V
Figure 10. Diode Forward Voltage vs. Current
100
0.60.4
1
t
r
t
d(off)
t
d(on)
t
f
10
V
DS
= 15 V
I
D
= 30 A
V
GS
= 4.5 V
0.8
10
T
J
= 25°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
16
3
0
25
T
J
, JUNCTION TEMPERATURE (°C)
I
D
= 24 A
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
50 75 175
200
100 125
300
EAS, SINGLE PULSE DRAINTOSOURCE
AVALANCHE ENERGY (mJ)
150
400
100
4
T
J
= 150°C
0.01
0.1
1
10
100
1000
0.1 1 10 100
V
GS
= 2.0 V
SINGLE PULSE
T
C
= 25°C
RDS(on) LIMIT
Thermal Limit
Package Limit
10 ms
100 ms
1 ms
10 ms
dc
I
D
, DRAIN CURRENT (A)
V
DS
, DRAINTOSOURCE VOLTAGE (V)
Q
GD
Q
GS
Q
T
NTMFS4744N
http://onsemi.com
6
TYPICAL PERFORMANCE CURVES
Figure 13. Avalanche Characteristics
10001 100
PULSE WIDTH (ms)
I
D
, DRAIN CURRENT (AMPS)
10
10
125°C
1
100
100°C
25°C

NTMFS4744NT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 30V 7A SO-8FL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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