NTLJD2105LTBG

© Semiconductor Components Industries, LLC, 2016
August, 2016 Rev. 2
1 Publication Order Number:
NTLJD2105L/D
NTLJD2105L
Power MOSFET
8 V, 4.3 A, High Side Load Switch with
Level Shift, 2x2 mm WDFN Package
Features
WDFN 2x2 mm Package with Exposed Drain Pads Offers Excellent
Thermal Performance
Low R
DS(on)
PChannel Load Switch with Nchannel MOSFET for
Level Shift
N Channel Operated at 1.5 V Gate Drive Voltage Level
P Channel Operated at 1.5 V Supply Voltage
Same Footprint as SC88
Low Profile (<0.8 mm) Allows it to Fit Easily into Extremely Thin
Environments
ESD Protection
These are PbFree Devices
Applications
High Slide Load Switch with Level Shift
Optimized for Power Management in Ultra Portable Equipment
MOSFET(Q2) MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Q2 Input Voltage (V
DS
, PChannel) V
IN
8 V
Q1 On/Off Voltage (V
GS
, NChannel) V
ON/OFF
6 V
Continuous Load
Current (Note 1)
Steady
State
T
A
= 25°C I
L
4.3
A
T
A
= 85°C 3.1
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
1.56 W
Continuous Load
Current (Note 2)
Steady
State
T
A
= 25°C
I
L
2.5
A
T
A
= 85°C 1.8
Power Dissipation
(Note 2)
T
A
= 25°C P
D
0.52 W
Pulsed Load
Current
t
p
= 10 ms
I
LM
20 A
Operating Junction and Storage
Temperature
T
J
,
T
STG
55 to
150
°C
Source Current (Body Diode) (Note 2) I
S
2.7 A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
2. Surfacemounted on FR4 board using the minimum recommended pad size.
1
2
3
6
5
4
S1
G1
D2
D1/G2
S2
www.onsemi.com
20 V
60 mW @ 2.5 V
50 mW @ 4.5 V
R
DS(on)
MAX
4.3 A
I
L
MAXV
INMAX
80 mW @ 1.8 V
115 mW @ 1.5 V
JN = Specific Device Code
M
= Date Code
G = PbFree Package
WDFN6
CASE 506AZ
MARKING
DIAGRAM
(Top View)
See detailed ordering and shipping information on page 5 of
this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
JN MG
G
1
2
3
6
5
4
D2
Q1
Q2
2, 3
6
4
5
1
Pin 1
D1/G2
D2
(Note: Microdot may be in either location)
NTLJD2105L
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2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
JunctiontoAmbient – Steady State (Note 3)
R
q
JA
80 °C/W
JunctiontoAmbient – t v 5 s (Note 3)
R
q
JA
38 °C/W
JunctiontoAmbient – Steady State Min Pad (Note 4)
R
q
JA
180 °C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surfacemounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Q2 DraintoSource Breakdown
Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
8.0 V
Q2 Forward Leakage Current I
FL
V
ON/OFF
= 0 V,
V
IN
= 8.0 V
T
J
= 25°C 0.1 mA
T
J
= 85°C 1
Q1 GatetoSource Leakage
Current
I
GSS
V
DS
= 0 V, V
GS1
= ±6 V ±100 nA
Q1 Diode Forward OnVoltage V
SD
I
S
= 1.0 A, V
GS1
= 0 V 0.8 1.1 V
ON CHARACTERISTICS
Q1 ON/OFF Voltage
V
ON/OFF
1.5 8.0
Q1 Gate Threshold Voltage V
GS1(TH)
V
GS1
= V
DS1
, I
D
= 250 mA
0.40 1.0 V
Q2 Input Voltage V
IN
1.8 8.0 V
Q2 DraintoSource On
Resistance
R
DS(on)
V
IN
= 4.5 V, I
L
= 4.0 A 33 50 mW
V
IN
= 2.5 V, I
L
= 3.0 A 40 60
V
IN
= 1.8 V, I
L
= 1.7 A 60 80
V
IN
= 1.5 V, I
L
= 1.2 A 75 115
Q2 Load Current I
L
V
DROP
v 0.2 V, V
IN
= 2.5 V, V
ON/OFF
= 1.5 V 1.0
A
V
DROP
v 0.3 V, V
IN
= 1.8 V, V
ON/OFF
= 1.5 V 1.0
NTLJD2105L
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3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
0
0.20
1
0.10
0.00
0.35
24
Figure 1. Voltage Drop versus Load Current @
V
IN
= 4.5 V
Figure 2. Voltage Drop versus Load Current @
V
IN
= 2.5 V
Figure 3. Voltage Drop versus Load Current @
V
IN
= 1.8 V
Figure 4. Voltage Drop versus Load Current @
V
IN
= 1.5 V
I
L
, LOAD CURRENT (AMPS)
V
DROP
, VOLTAGE DROP (V)
V
IN
= 1.5 V
T
J
= 25°C
0.05
0.15
3
0.30
0.25
T
J
= 85°C
0
0.20
1
0.10
0.00
24
I
L
, LOAD CURRENT (AMPS)
V
DROP
, VOLTAGE DROP (V)
V
IN
= 1.8 V
T
J
= 25°C
0.05
0.15
3
0.25
T
J
= 85°C
T
J
= 85°C
0
0.20
1
0.10
0.00
24
I
L
, LOAD CURRENT (AMPS)
V
DROP
, VOLTAGE DROP (V)
V
IN
= 2.5 V
T
J
= 25°C
0.05
0.15
3
T
J
= 85°C
01
0.10
0.00
24
I
L
, LOAD CURRENT (AMPS)
V
DROP
, VOLTAGE DROP (V)
V
IN
= 4.5 V
T
J
= 25°C
0.05
0.15
3

NTLJD2105LTBG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET 8 V-4.3A HS LOADSW
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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