FDD8444L N-Channel PowerTrench
®
MOSFET
FDD8444L Rev A (W) www.fairchildsemi.com2
MOSFET Maximum Ratings T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol Parameter Ratings Units
V
DSS
Drain to Source Voltage 40 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current Continuous (T
C
< 150°C, V
GS
= 10V) (Note 1) 50
AContinuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θJA
= 52
o
C/W) 16
Pulsed See Figure 4
E
AS
Single Pulse Avalanche Energy (Note 2) 295 mJ
P
D
Power Dissipation 153 W
Derate above 25
o
C1.02W/
o
C
T
J
, T
STG
Operating and Storage Temperature -55 to +175
o
C
R
θJC
Thermal Resistance, Junction to Case 0.98
o
C/W
R
θJA
Thermal Resistance, Junction to Ambient TO-252, 1in
2
copper pad area 52
o
C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDD8444L FDD8444L TO-252AA 13” 12mm 2500 units
Electrical Characteristics T
J
= 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
B
VDSS
Drain to Source Breakdown Voltage I
D
= 250μA, V
GS
= 0V 40 - - V
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 32V, - - 1
μA
V
GS
= 0V T
J
= 150
o
C - - 250
I
GSS
Gate to Source Leakage Current V
GS
= ±20V - - ±100 nA
V
GS(th)
Gate to Source Threshold Voltage V
GS
= V
DS
, I
D
= 250μA11.83V
r
DS(on)
Drain to Source On Resistance
I
D
= 50A, V
GS
= 10V - 3.5 5.2
mΩ
I
D
= 50A, V
GS
= 5V - 3.8 6.0
I
D
= 50A, V
GS
= 4.5V - 4.0 6.5
I
D
= 50A, V
GS
= 5V,
T
J
= 175
o
C
- 6.8 10.7
C
iss
Input Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
- 5530 - pF
C
oss
Output Capacitance - 605 - pF
C
rss
Reverse Transfer Capacitance - 400 - pF
R
G
Gate Resistance f = 1MHz - 1.7 - Ω
Q
g(TOT)
Total Gate Charge at 5V V
GS
= 0 to 5V
V
DD
= 20V
I
D
= 50A
I
g
= 1.0mA
-4660nC
Q
g(TH)
Threshold Gate Charge V
GS
= 0 to 2V - 5.4 7 nC
Q
gs
Gate to Source Gate Charge
- 16.3 - nC
Q
gs2
Gate Charge Threshold to Plateau - 10.9 - nC
Q
gd
Gate to Drain “Miller“ Charge - 21 - nC
