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SQM110N05-06L_GE3

P1-P3P4-P6P7-P9P10-P10
SQM110N05-06L
www.vishay.com
Vishay Siliconix
S11-2035-Rev. B, 17-Oct-11
1
Document Number: 68838
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 55 V (D-S) 175 °C MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualified
c
•100 % R
g
and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) 55
R
DS(on)
() at V
GS
= 10 V 0.006
R
DS(on)
() at V
GS
= 4.5 V 0.010
I
D
(A) 110
Configuration Single
D
G
S
N-Channel MOSFET
TO-263
SDG
Top View
ORDERING INFORMATION
Package TO-263
Lead (Pb)-free and Halogen-free SQM110N05-06L-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
55
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
T
C
= 25 °C
I
D
110
A
T
C
= 125 °C 64
Continuous Source Current (Diode Conduction) I
S
120
Pulsed Drain Current
a
I
DM
443
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
61
Single Pulse Avalanche Energy E
AS
186 mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
157
W
T
C
= 125 °C 52
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
b
R
thJA
40
°C/W
Junction-to-Case (Drain) R
thJC
0.95
SQM110N05-06L
www.vishay.com
Vishay Siliconix
S11-2035-Rev. B, 17-Oct-11
2
Document Number: 68838
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 55 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2.0 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 55 V - - 1.0
μA V
GS
= 0 V V
DS
= 55 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 55 V, T
J
= 175 °C - - 150
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 120 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 30 A - 0.0047 0.006
V
GS
= 10 V I
D
= 30 A, T
J
= 125 °C - - 0.0105
V
GS
= 10 V I
D
= 30 A, T
J
= 175 °C - - 0.0132
V
GS
= 4.5 V I
D
= 20 A - 0.008 0.010
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 30 A - 90 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 3550 4440
pF Output Capacitance C
oss
- 610 765
Reverse Transfer Capacitance C
rss
- 288 360
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 28 V, I
D
= 110 A
- 73 110
nC Gate-Source Charge
c
Q
gs
- 14.5 -
Gate-Drain Charge
c
Q
gd
- 16.8 -
Gate Resistance R
g
f = 1 MHz 0.62 1.2 1.85
Turn-On Delay Time
c
t
d(on)
V
DD
= 28 V, R
L
= 0.25
I
D
110 A, V
GEN
= 10 V, R
g
= 2.5
-1218
ns
Rise Time
c
t
r
-1320
Turn-Off Delay Time
c
t
d(off)
-3756
Fall Time
c
t
f
-1320
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
- - 443 A
Forward Voltage V
SD
I
F
= 85 A, V
GS
= 0 - 0.9 1.5 V
SQM110N05-06L
www.vishay.com
Vishay Siliconix
S11-2035-Rev. B, 17-Oct-11
3
Document Number: 68838
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
40
80
120
160
048121620
V
GS
=10Vthru6V
V
GS
=5V
V
GS
=3V,2V
V
GS
=4V
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
0
30
60
90
120
150
0 1224364860
I
D
- Drain Current (A)
- Transconductance (S)
g
fs
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
0
1000
2000
3000
4000
5000
0 5 10 15 20 25 30 35 40 45 50 55
C
iss
C
oss
C
rss
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
0
20
40
60
80
100
120
0246810
T
C
= 125 °C
T
C
= 25 °C
T
C
= - 55 °C
V
GS
- Gate-to-Source Voltage (V)
I
D
- Drain Current (A)
0
0.004
0.008
0.012
0.016
0.020
0 20406080100120
V
GS
=10V
V
GS
=4.5V
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
0
2
4
6
8
10
0 1020304050607080
I
D
= 110 A
V
DS
=28V
Q
g
- Total Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
P1-P3P4-P6P7-P9P10-P10

SQM110N05-06L_GE3

Mfr. #:
Buy SQM110N05-06L_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 55V 110A 158W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
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