July 2015
DocID027380 Rev 3
1/14
This is information on a product in full production.
www.st.com
STB130N6F7
N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7
Power MOSFET in a D²PAK package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code V
DS
R
DS(on)
max. I
D
P
TOT
STB130N6F7 60 V 5.0 mΩ 80 A 160 W
Among the lowest R
DS(on)
on the market
Excellent figure of merit (FoM)
Low C
rss
/C
iss
ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Table 1: Device summary
Order code Marking Package Packing
STB130N6F7 130N6F7 D²PAK Tape and reel
1
3
TAB
D
2
PAK
AM01475v1_Tab
D(2, TAB)
G(1)
S(3)
STB130N6F7
2/14
DocID027380 Rev 3
Contents
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 5
3 Test circuits ..................................................................................... 7
4 Package information ....................................................................... 8
4.1 D²PAK type A package information ................................................... 8
4.2 D²PAK packing information ............................................................. 11
5 Revision history ............................................................................ 13
STB130N6F7
Electrical ratings
DocID027380 Rev 3
3/14
1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage 60 V
V
GS
Gate-source voltage ±20 V
I
D
(1)
Drain current (continuous) at T
case
= 25 °C 80
A
Drain current (continuous) at T
case
= 100 °C 80
I
DM
(2)
Drain current (pulsed) 320 A
P
TOT
Total dissipation at T
case
= 25 °C 160 W
E
AS
(3)
Single pulse avalanche energy 200 mJ
T
stg
Storage temperature
-55 to 175 °C
T
j
Operating junction temperature
Notes:
(1)
Current is limited by package.
(2)
Pulse width is limited by safe operating area.
(3)
starting T
j
= 25 °C, I
D
= 20 A, V
DD
= 40 V.
Table 3: Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case 0.94
°C/W
R
thj-amb
(1)
Thermal resistance junction-ambient 30
Notes:
(1)
When mounted on a 1-inc FR-4, 2 Oz copper board.

STB130N6F7

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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