IRF6655TRPBF

IRF6655PbF
4 www.irf.com
Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
Fig 9. Normalized Typical On-Resistance vs.
Drain Current and Gate Voltage
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
9.0V
8.0V
7.0V
BOTTOM 6.0V
60µs PULSE WIDTH
Tj = 25°C
6.0V
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
6.0V
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
9.0V
8.0V
7.0V
BOTTOM 6.0V
2 4 6 8 10 12
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= -40°C
T
J
= 25°C
T
J
= 150°C
V
DS
= 25V
60µs PULSE WIDTH
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
T
y
p
i
c
a
l
R
D
S
(
o
n
)
,
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 5.0A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0 2 4 6 8 10
I
D
, Drain Current (A)
40
60
80
100
120
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
)
T
J
= 25°C
T
J
= 125°C
Vgs = 10V
IRF6655PbF
www.irf.com 5
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig11. Maximum Safe Operating Area
0.4 0.6 0.8 1.0 1.2 1.4 1.6
V
SD
, Source-to-Drain Voltage (V)
1
10
100
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= -40°C
T
J
= 25°C
T
J
= 150°C
V
GS
= 0V
Fig 12. Maximum Drain Current vs. Ambient Temperature
Fig 13. Threshold Voltage vs. Temperature
Fig 14. Maximum Avalanche Energy vs. Drain Current
25 50 75 100 125 150
Starting T
J
, Junction Temperature (°C)
0
10
20
30
40
50
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP 0.86A
1.3A
BOTTOM 5.0A
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
2
2.5
3
3.5
4
4.5
5
5.5
T
y
p
i
c
a
l
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 25µA
I
D
= 250µA
I
D
= 1.0mA
I
D
= 1.0A
0 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
100msec
25 50 75 100 125 150
T
A
, Ambient Temperature (°C)
0
1
2
3
4
5
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
IRF6655PbF
6 www.irf.com
Fig 15b. Gate Charge Waveform
Fig 15a. Gate Charge Test Circuit
Fig 16b. Unclamped Inductive Waveforms
t
p
V
(BR)DSS
I
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 17b. Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
Fig 17a. Switching Time Test Circuit
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
V
DS
Pulse Width 1 µs
Duty Factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
V
GS
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3µF
50K
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2 Qgd Qgodr

IRF6655TRPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET 100V 1 N-CH HEXFET DIRECTFET SH
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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