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PHP78NQ03LT,127

P1-P3P4-P6P7-P9P10-P12P13-P13
PHP78NQ03LT
N-channel TrenchMOS logic level FET
Rev. 06 — 30 January 2009 Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Suitable for high frequency
applications due to fast switching
characteristics
Suitable for logic level gate drive
sources
1.3 Applications
Computer motherboards DC-to-DC convertors
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter Conditions Min Typ Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - - 25 V
I
D
drain current V
GS
=10V; T
mb
=25°C --75A
P
tot
total power
dissipation
T
mb
= 25 °C; see Figure 2 --93W
Dynamic characteristics
Q
GD
gate-drain charge V
GS
=5V; I
D
=50A;
V
DS
=15V; T
j
=25°C;
see Figure 11
-4.25.6nC
Static characteristics
R
DSon
drain-source
on-state resistance
V
GS
=10V; I
D
=25A;
T
j
= 25 °C; see Figure 9;
see Figure 10
-7.659mΩ
PHP78NQ03LT_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 30 January 2009 2 of 13
NXP Semiconductors
PHP78NQ03LT
N-channel TrenchMOS logic level FET
2. Pinning information
3. Ordering information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1G gate
SOT78
( TO-220AB ; S C - 4 6 )
2D drain
3S source
mb D mounting base; connected to
drain
12
mb
3
S
D
G
mbb076
Table 3. Ordering information
Type number Package
Name Description Version
PHP78NQ03LT TO-220AB;
SC-46
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
PHP78NQ03LT_6 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 06 — 30 January 2009 3 of 13
NXP Semiconductors
PHP78NQ03LT
N-channel TrenchMOS logic level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 25 V
V
DGR
drain-gate voltage T
j
≥ 25 °C; T
j
≤ 175 °C; R
GS
=20kΩ -25V
V
GS
gate-source voltage -20 20 V
I
D
drain current V
GS
=5V; T
mb
= 100 °C; see Figure 1 -43A
V
GS
=10V; T
mb
=25°C - 75 A
V
GS
=10V; T
mb
=100°C - 53 A
V
GS
=5V; T
mb
=25°C; see Figure 1;
see Figure 3
-61A
I
DM
peak drain current t
p
≤ 10 µs; pulsed; T
mb
=25°C;
see Figure 3
-228A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 -93W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C - 75 A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
=25°C - 228 A
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
V
GS
=10V; T
j(init)
=25°C; I
D
=43A; V
sup
≤ 25 V;
unclamped; t
p
= 0.25 ms; R
GS
=50Ω
-185mJ
P1-P3P4-P6P7-P9P10-P12P13-P13

PHP78NQ03LT,127

Mfr. #:
Buy PHP78NQ03LT,127
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 25V 75A TO220AB
Lifecycle:
New from this manufacturer.
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