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APT60M60JLL

P1-P3P4-P5
APT60M60JLL
050-7091 Rev A 11-2003
C
rss
C
iss
C
oss
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS) V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g
, TOTAL GATE CHARGE (nC) V
SD
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS
, GATE-TO-SOURCE VOLTAGE (VOLTS) I
D
, DRAIN CURRENT (AMPERES)
I
DR
, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
1 10 100 600 0 10 20 30 40 50
0 50 100 150 200 250 300 350 400 0.3 0.5 0.7 0.9 1.1 1.3 1.5
280
100
50
10
5
1
16
12
8
4
0
T
C
=+25°C
T
J
=+150°C
SINGLE PULSE
10mS
1mS
100µS
T
J
=+150°C
T
J
=+25°C
V
DS
= 300V
V
DS
= 120V
V
DS
= 480V
I
D
= 70A
40,000
10,000
1,000
100
300
100
10
1
OPERATION HERE
LIMITED BY R
DS
(ON)
I
D
(A) I
D
(A)
FIGURE 14, DELAY TIMES vs CURRENT FIGURE 15, RISE AND FALL TIMES vs CURRENT
I
D
(A) R
G
, GATE RESISTANCE (Ohms)
FIGURE 16, SWITCHING ENERGY vs CURRENT FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
V
DD
= 400V
R
G
= 5Ω
T
J
= 125°C
L = 100µH
E
on
E
off
t
r
t
f
SWITCHING ENERGY (µJ) t
d(on)
and t
d(off)
(ns)
SWITCHING ENERGY (µJ) t
r
and t
f
(ns)
020406080100120 020406080100120
0 20 40 60 80 100 120 0 5 10 15 20 25 30 35 40 45 50
V
DD
= 400V
I
D
= 70A
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
t
d(on)
t
d(off)
E
on
E
off
250
200
150
100
50
0
4000
3500
3000
2500
2000
1500
1000
500
0
V
DD
= 400V
R
G
= 5Ω
T
J
= 125°C
L = 100µH
V
DD
= 400V
R
G
= 5Ω
T
J
= 125°C
L = 100µH
E
ON
includes
diode reverse recovery.
140
120
100
80
60
40
20
0
10000
8000
6000
4000
2000
0
050-7091 Rev A 11-2003
Typical Performance Curves
APT60M60JLL
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP
®
is a Registered Trademark of SGS Thomson.
SOT-227 (ISOTOP
®
) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source Drain
Gate
*
r = 4.0 (.157)
(2 places)
4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
90%
0
Drain Current
Drain Voltage
Gate Voltage
T
J
= 125 C
10%
90%
t
d(off)
t
f
Switching Energy
T
J
= 125 C
10 %
10 %
5 %
90%
t
r
t
d(on)
Gate Voltage
Drain Current
5 %
Drain Voltage
Switching Energy
I
C
D.U.T.
APT60DF60
V
CE
Fi
g
ure 20
,
Inductive Switchin
g
Test Circuit
V
DD
G
P1-P3P4-P5

APT60M60JLL

Mfr. #:
Buy APT60M60JLL
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power MOSFET - MOS7
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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