TC7W00FK,LF

TC7W00FU/FK
2014-11-10
1
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7W00FU, TC7W00FK
Dual 2-Input NAND Gate
Features
High Speed : t
pd =
6ns (typ.) at V
CC
= 5V
Low power dissipation : I
CC
= 1μA (max) at Ta = 25°C
High noise immunity : V
NIH
= V
NIL
= 28% V
CC
(min)
Output drive capability : 10 LSTTL Loads
Symmetrical Output Impedance : |I
OH
| = I
OL
= 4mA (min)
Balanced propagation delays : t
pLH
t
pHL
Wide operating voltage range : V
CC
= 2 to 6 V
Marking
Pin Assignment (top view)
TC7W00FU
(SM8)
TC7W00FK
(US8)
Weight
SSOP8
-P-0.65 : 0.02 g (typ.)
SSOP8-P-0.50A : 0.01 g (typ.)
1A
1
1B
2
2Y
3
GND
4
8
V
CC
7
1Y
6
2B
5
2A
Start of commercial production
1991-09
Lot No.
Product Name
US8
W
0 0
7 W 0 0
TC7W00FU/FK
2014-11-10
2
Absolute Maximum Ratings
(Ta = 25°C)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
IEC Logic Symbol Truth Table
Operating Ranges
Characteristics Symbol Rating Unit
Supply voltage V
CC
2.0 to 6.0 V
Input voltage V
IN
0 to V
CC
V
Output voltage V
OUT
0 to V
CC
V
Operating temperature T
opr
40 to 85 °C
Input rise and fall time t
r
, t
f
0 to 1000 (V
CC
= 2.0 V)
ns 0 to 500 (V
CC
= 4.5 V)
0 to 400 (V
CC
= 6.0 V)
Characteristics Symbol Rating Unit
Supply voltage V
CC
0.5 to 7.0 V
DC input voltage V
IN
0.5 to V
CC
+ 0.5 V
DC output voltage V
OUT
0.5 to V
CC
+ 0.5 V
Input diode current I
IK
±20 mA
Output diode current I
OK
±20 mA
DC output current I
OUT
±25 mA
DC V
CC
/ground current I
CC
±25 mA
Power dissipation P
D
300 (SM8)
mW
200 (US8)
Storage temperature T
stg
65 to 150 °C
Lead temperature (10 s) T
L
260 °C
A B Y
L L H
L H H
H L H
H H L
OUT Y
&
IN A
IN B
TC7W00FU/FK
2014-11-10
3
Electrical Characteristics
DC Characteristics
Characteristics Symbol Test Condition
Ta = 25°C Ta = 40 to 85°C
Unit
V
CC
(V) Min Typ. Max Min Max
High-level input voltage V
IH
2.0 1.5 1.5
V
4.5 3.15 3.15
6.0 4.2 4.2
Low-level input voltage V
IL
2.0 0.5 0.5
4.5 1.35 1.35
6.0 1.8 1.8
High-level output voltage V
OH
V
IN
= V
IH
or
V
IL
I
OH
= 20 µA
2.0
1.9
2.0
1.9
V
4.5 4.4 4.5 4.4
6.0 5.9 6.0 5.9
I
OH
= 4 mA 4.5 4.18 4.31 4.13
I
OH
= 5.2 mA 6.0 5.68 5.80 5.63
Low-level output voltage V
OL
V
IN
= V
IH
I
OL
= 20 µA
2.0 0.0 0.1 0.1
4.5 0.0 0.1 0.1
6.0 0.0 0.1 0.1
I
OL
= 4 mA 4.5 0.17 0.26 0.33
I
OL
= 5.2 mA 6.0 0.18 0.26 0.33
Input leakage current I
IN
V
IN
= V
CC
or GND 6.0 ±0.1 ±1.0 µA
Quiescent supply current I
CC
V
IN
= V
CC
or GND 6.0 1.0 10.0 µA

TC7W00FK,LF

Mfr. #:
Manufacturer:
Toshiba
Description:
Logic Gates Dual Input LMOS High Speed
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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