IRLR2908TRPBF Datasheet IRLR2908TRLPBF, IRLR2908TRPBF, IRLR2908PBF | P1-P3

10/01/10

www.irf.com 1

IRLR2908PbF

IRLU2908PbF

HEXFET

®

Power MOSFET

Description

This HEXFET ® Power MOSFET utilizes the latest processing techniques

to achieve extremely low on-resistance per silicon area. Additional features

of this HEXFET power MOSFET are a 175°C junction operating temperature,

low RθJC, fast switching speed and improved repetitive avalanche rating.

These features combine to make this design an extremely efficient and

reliable device for use in a wide variety of applications.

The D-Pak is designed for surface mounting using vapor phase, infrared,

or wave soldering techniques. The straight lead version (IRFU series) is

for through-hole mounting applications. Power dissipation levels up to 1.5

watts are possible in typical surface mount applications.

S

D

G

V

DSS

= 80V

R

DS(on)

= 28mΩ

I

D

= 30A

D-Pak

IRLR2908PbF

Features

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free

I-Pak

IRLU2908PbF

Absolute Maximum Ratings

Parameter Units

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V (Silicon Limited)

A

I

D

@ T

C

= 100°C

Continuous Drain Current, V

GS

@ 10V (See Fig. 9)

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V

(Package Limited)

I

DM

Pulsed Drain Current

P

D

@T

C

= 25°C

Maximum Power Dissipation W

Linear Derating Factor W/°C

V

GS

Gate-to-Source Voltage V

E

AS

Single Pulse Avalanche Energy (Thermally Limited)

mJ

E

AS

(tested)

Sin

g

le Pulse Avalanche Ener

gy

Tested Value

I

AR

Avalanche Current

A

E

AR

Repetitive Avalanche Ener

gy

mJ

dv/dt

Peak Diode Recovery dv/dt

V/ns

T

J

Operating Junction and °C

T

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

Junction-to-Case ––– 1.3 °C/W

R

θJA

Junction-to-Ambient (PCB Mount)

––– 40

R

θJA

Junction-to-Ambient ––– 110

120

0.77

± 16

180

250

See Fig.12a,12b,15,16

Max.

39

28

150

30

300 (1.6mm from case )

-55 to + 175

2.3

PD - 95552B

IRLR/U2908PbF

2 www.irf.com

S

D

G

S

D

G

Notes  through  are on page 11

HEXFET

®

is a registered trademark of International Rectifier.

Static @ T

J

= 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage 80 ––– ––– V

∆ΒV

DSS

/

∆T

J

Breakdown Voltage Temp. Coefficient ––– 0.085 ––– V/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 22.5 28

mΩ

––– 25 30

V

GS(th)

Gate Threshold Voltage 1.0 ––– 2.5 V

gfs Forward Transconductance 35 ––– ––– S

I

DSS

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

I

GSS

Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leakage ––– ––– -200

Q

g

Total Gate Charge ––– 22 33 nC

Q

gs

Gate-to-Source Charge ––– 6.0 9.1

Q

gd

Gate-to-Drain ("Miller") Charge ––– 11 17

t

d(on)

Turn-On Delay Time ––– 12 ––– ns

t

r

Rise Time –––95–––

t

d(off)

Turn-Off Delay Time ––– 36 –––

t

f

Fall Time –––55–––

L

D

Internal Drain Inductance ––– 4.5 ––– nH Between lead,

6mm (0.25in.)

L

S

Internal Source Inductance ––– 7.5 ––– from package

and center of die contact

C

iss

Input Capacitance ––– 1890 ––– pF

C

oss

Output Capacitance ––– 260 –––

C

rss

Reverse Transfer Capacitance ––– 35 –––

C

oss

Output Capacitance ––– 1920 –––

C

oss

Output Capacitance ––– 170 –––

C

oss

eff.

Effective Output Capacitance ––– 310 –––

Diode Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– ––– 39

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 150

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– 1.3 V

t

rr

Reverse Recovery Time ––– 75 110 ns

Q

rr

Reverse Recovery Charge ––– 210 310 nC

t

on

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

V

DS

= 64V

V

GS

= 4.5V

ƒ = 1.0MHz, See Fig. 5

V

GS

= 0V, V

DS

= 1.0V, ƒ = 1.0MHz

V

GS

= 4.5V

MOSFET symbol

V

GS

= 0V

V

DS

= 25V

V

GS

= 0V, V

DS

= 64V, ƒ = 1.0MHz

Conditions

V

GS

= 0V, V

DS

= 0V to 64V

T

J

= 25°C, I

F

= 23A, V

DD

= 25V

di/dt = 100A/µs

T

J

= 25°C, I

S

= 23A, V

GS

= 0V

showing the

integral reverse

p-n junction diode.

V

DS

= V

GS

, I

D

= 250µA

V

DS

= 80V, V

GS

= 0V

V

DS

= 80V, V

GS

= 0V, T

J

= 125°C

R

G

= 8.3Ω

I

D

= 23A

V

DS

= 25V, I

D

= 23A

V

DD

= 40V

I

D

= 23A

V

GS

= 16V

V

GS

= -16V

V

GS

= 4.5V, I

D

= 20A

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 23A

IRLR/U2908PbF

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

vs. Drain Current

0.01 0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.5V

20µs PULSE WIDTH

Tj = 25°C

VGS

TOP 15V

10V

4.5V

4.0V

3.5V

3.0V

2.7V

BOTTOM 2.5V

0.01 0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

2.5V

20µs PULSE WIDTH

Tj = 175°C

VGS

TOP 15V

10V

4.5V

4.0V

3.5V

3.0V

2.7V

BOTTOM 2.5V

0 10 20 30 40 50 60

I

D

, Drain-to-Source Current (A)

0

10

20

30

40

50

60

G

F

S

,

F

o

r

w

a

r

d

T

r

a

n

s

c

o

n

d

u

c

t

a

n

c

e

(

S

)

T

J

= 25°C

T

J

= 175°C

VDS = 10V

20µs PULSE WIDTH

2 3 4 5

V

GS

, Gate-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 25V

20µs PULSE WIDTH

IRLR2908TRPBF

IRLR2908TRPBF

Products related to this Datasheet