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PTFC260202FC-V1-R0

P1-P3P4-P6P7-P9
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-02
Thermally-Enhanced High Power RF LDMOS FET
25 W, 28 V, 2495 – 2690 MHz
Description
The PTFC260202FC integrates two independent 10-watt LDMOS
FETs and is designed for use in cellular amplifier applications in the
2495 to 2690 MHz frequency band. Manufactured with Wolfspeed's
advanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
PTFC260202FC
Package H-37248-4
Features
• Broadbandinputmatching
• TypicalCWperformance,2620MHz,28V
- Output power at P
1dB
= 25 W
- Efficiency = 57%
-LinearGain=19.4dB
• Capableofhandling10:1VSWR@28V,25W
(CW) output power
• IntegratedESDprotection
• HumanBodyModelClass1B(perANSI/ESDA/
JEDEC JS-001)
• Lowthermalresistance
• Pb-freeandRoHScompliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Wolfspeed test fixture)
V
DD
=28V,I
DQ
=170mA,P
OUT
= 5 W avg, ƒ
1
= 2615 MHz, ƒ
2
= 2625 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average=8dB@0.01%CCDF
Characteristic Symbol Min Typ Max Unit
Linear Gain G
ps
19 20 — dB
Drain Efficiency
h
D
27.5 30 — %
IntermodulationDistortion IMD — –31.5 –30 dBc
0
10
20
30
40
50
15
16
17
18
19
20
30 31 32 33 34 35 36 37 38 39 40
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 0.17 A, ƒ = 2620 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
Efficiency
Gain
PTFC260202FC
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-02
2
PTFC260202FC
DC Characteristics (single side)
Characteristic Conditions Symbol Min Typ Max Unit
Drain-SourceBreakdownVoltage V
GS
=0V,I
DS
=10mA V(
BR)DSS
65 — — V
DrainLeakageCurrent V
DS
=28V,V
GS
=0V I
DSS
— — 1 µA
V
DS
=63V,V
GS
=0V I
DSS
— — 10 µA
On-StateResistance V
GS
=10V,V
DS
=0.1V R
DS(on)
— 0.05 — W
OperatingGateVoltage V
DS
=28V,I
DQ
= 1.35A V
GS
2.3 2.8 3.3 V
GateLeakageCurrent V
GS
=10V,V
DS
=0V I
GSS
— — 1 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-SourceVoltage V
DSS
65 V
Gate-SourceVoltage V
GS
–6to+10 V
OperatingVoltage  V
DD
0to+32 V
Junction Temperature T
J
225 °C
StorageTemperatureRange T
STG
–65to+150 °C
ThermalResistance(T
CASE
=70°C,25WCW) R
qJC
2.2 °C/W
Ordering Information
Type and Version Order Code Package Description Shipping
PTFC260202FCV1R0 PTFC260202FC-V1-R0 H-37248-4,earlessange Tape&Reel,50pcs
PTFC260202FCV1R250 PTFC260202FC-V1-R250 H-37248-4,earlessange Tape&Reel,250pcs
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.comRev. 04, 2018-07-02
3
PTFC260202FC
Typical Performance (data taken in a production test fixture)
0
5
10
15
20
25
30
35
40
45
-60
-55
-50
-45
-40
-35
-30
-25
-20
-15
30 31 32 33 34 35 36 37 38 39 40
Drain Efficiency (%)
IMD & ACPR (dBc)
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 0.17 A, ƒ = 2620 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
IMD Low
IMD Up
ACPR
Efficiency
-40
-35
-30
-25
-20
-15
-10
-5
0
0
5
10
15
20
25
30
35
40
2480 2520 2560 2600 2640 2680 2720
Gain (dB) / Efficiency (%)
Frequency (MHz)
Single-carrier WCDMA 3GGP Broadband
V
DD
= 28 V, I
DQ
= 0.17 A, P
OUT
= 4 W,
PAR = 10 dB
Gain
Efficiency
IRL
ACPR
IMD (dBc) / ACPR (dBc)
0
10
20
30
40
50
60
70
14
15
16
17
18
19
20
21
35 36 37 38 39 40 41 42 43 44 45
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
Power Sweep, CW
Gain & Efficiency vs. Output Power
V
DD
= 28 V, I
DQ
= 0.17 A, ƒ = 2620 MHz
Efficiency
Gain
-40
-35
-30
-25
-20
30 31 32 33 34 35 36 37 38 39 40
IMD (dBc)
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V
DD
= 28 V, I
DQ
= 0.17 A, ƒ = 2620 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
2690 Upper
2690 Lower
2496 Upper
2496 Lower
P1-P3P4-P6P7-P9

PTFC260202FC-V1-R0

Mfr. #:
Buy PTFC260202FC-V1-R0
Manufacturer:
N/A
Description:
RF MOSFET Transistors RF LDMOS FET
Lifecycle:
New from this manufacturer.
Delivery:
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