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NTJS4405NT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 6
1 Publication Order Number:
NTJS4405N/D
NTJS4405N, NVJS4405N
Small Signal MOSFET
25 V, 1.2 A, Single, N−Channel, SC−88
Features
• Advance Planar Technology for Fast Switching, Low R
DS(on)
• Higher Efficiency Extending Battery Life
• AEC−Q101 Qualified and PPAP Capable − NVJS4405N
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Boost and Buck Converter
• Load Switch
• Battery Protection
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
25 V
Gate−to−Source Voltage V
GS
"8.0 V
Drain Current t < 5 s T
A
= 25°C I
D
1.2 A
Continuous Drain Current
(Note 1)
Steady
State
T
A
= 25°C
I
D
1.0
A
T
A
= 75°C 0.80
Power Dissipation (Note 1) Steady State P
D
0.63 W
Power Dissipation (Note 1) t v 5 s P
D
0.89 W
Pulsed Drain Current
t
p
= 10 ms
I
DM
3.7 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
+150
°C
Source Current (Body Diode) (Note 1) I
S
0.8 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
ESD Rating − Machine Model 25 V
THERMAL RESISTANCE RATINGS
Rating Symbol Max Unit
Junction−to−Lead – Steady State (Note 1)
R
q
JL
102
°C/W
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
200
Junction−to−Ambient − t v 5 s (Note 1)
R
q
JA
140
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
Device Package Shipping†
ORDERING INFORMATION
http://onsemi.com
V
(BR)DSS
R
DS(on)
Typ I
D
Max
25 V
249 mW @ 4.5 V
299 mW @ 2.7 V
1.2 A
1256
Drain
3
Gate
4Source
N−Channel
NTJS4405NT1G SC−88
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NVJS4405NT1G SC−88
(Pb−Free)
3000 / Tape & Reel
MARKING DIAGRAM &
PIN ASSIGNMENT
TS M G
G
1
6
1
TS = Device Code
M = Date Code
G = Pb−Free Package
DDS
DDG
(Note: Microdot may be in either location)
SC−88/SOT−363
CASE 419B
NTJS4405N, NVJS4405N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 mA
25 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
30 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= 20 V
T
J
= 25°C 1.0 mA
T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= 8.0 V 100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250 mA
0.65 1.5 V
Negative Threshold Temperature
Coefficient
V
GS(TH)
/T
J
−2.0 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= 4.5 V, I
D
= 0.6 A 249 350
mW
V
GS
= 2.7 V, I
D
= 0.2 A 299 400
V
GS
= 4.5 V, I
D
= 1.2 A 260
Forward Transconductance g
FS
V
DS
= 5.0 V, I
D
= 0.5 A 0.5 S
CHARGES AND CAPACITANCES
Input Capacitance
C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 10 V
49 60
pF
Output Capacitance C
OSS
22.4 30
Reverse Transfer Capacitance C
RSS
8.0 12
Total Gate Charge Q
G(TOT)
V
GS
= 4.5 V, V
DS
= 5.0 V,
I
D
= 0.95 A
0.75 1.5
nC
Threshold Gate Charge Q
G(TH)
0.10
Gate−to−Source Charge Q
GS
0.30 0.50
Gate−to−Drain Charge Q
GD
0.20 0.40
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(ON)
V
GS
= 4.5 V, V
DS
= 6.0 V,
I
D
= 0.5 A, R
G
= 50 W
6.0 12
ns
Rise Time t
r
4.7 8.0
Turn−Off Delay Time t
d(OFF)
25 35
Fall Time t
f
41 60
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 0.6 A
T
J
= 25°C 0.82 1.20 V
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTJS4405N, NVJS4405N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
0
5
1
31
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
2.5
0.5
0
Figure 1. On−Region Characteristics
0.5
2
21 2.5
1.5
1
0
0
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.4
0.2
0
Figure 3. On−Resistance vs. Drain Current and
Temperature
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
−50 0−25 25
1.4
1.2
1
0.8
0.6
50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
1.0
1.0 2.0
T
J
= −55°C
T
J
= 125°C
75 150
I
D
= 0.6 A
V
GS
= 4.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
2
25°C
0 5.0
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
3.5 V
7 V
54
V
DS
≥ 5 V
0.6
V
GS
= 2 V
1.5
3.5
4.5
0.5
1.5
T
J
= 125°C
4.03.0
V
GS
= 4.5 V
T
J
= −55°C
T
J
= 25°C
0.1
0.4 1
0.3
0.2
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.2 0.6 21.4
0.4
1.20.8
V
GS
= 2.7 V
T
J
= 25°C
0.8
1.8
1.6
1.6 1.8
V
GS
= 4.5 V
1
5
1000
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
DSS,
LEAKAGE (nA)
02515
10000
10
V
GS
= 0 V
T
J
= 125°C
20
100
T
J
= 150°C
2
3
4
0.5 3.51.5 2.5 4.5
V
GS
= 2.5 V
V
GS
= 3 V
4 V
6 V
5.5 V
4.5 V
P1-P3P4-P5

NTJS4405NT1G

Mfr. #:
Buy NTJS4405NT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 25V 1.2A N-Channel
Lifecycle:
New from this manufacturer.
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