SGP30N60
SGW30N60
1 Rev. 2.5 Nov. 09
Fast IGBT in NPT-technology
• 75% lower E
off
compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Qualified according to JEDEC
1
for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type V
CE
I
C
V
CE(sat)
T
j
Marking Package
SGP30N60 600V 30A 2.5V
150°C
G30N60 PG-TO-220-3-1
SGW30N60 600V 30A 2.5V
150°C
G30N60 PG-TO-247-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
V
CE
600 V
DC collector current
T
C
= 25°C
T
C
= 100°C
I
C
41
30
Pulsed collector current, t
p
limited by T
jmax
I
Cpuls
112
Turn off safe operating area
V
CE
≤ 600V, T
j
≤ 150°C
-
112
A
Gate-emitter voltage V
GE
±20
V
Avalanche energy, single pulse
I
C
= 30 A, V
CC
= 50 V, R
GE
= 25 Ω,
start at T
j
= 25°C
E
AS
165 mJ
Short circuit withstand time
2
V
GE
= 15V, V
CC
≤ 600V, T
j
≤ 150°C
t
SC
10
µs
Power dissipation
T
C
= 25°C
P
tot
250 W
Operating junction and storage temperature T
j
, T
stg
-55...+150
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
T
s
260
°C
1
J-STD-020 and JESD-022
2
Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-220-3-1
PG-TO-247-3