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BA891,115

P1-P3P4-P6
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
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depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
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- © NXP B.V. (year). All rights reserved. -
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NXP Semiconductors
BA891
Band-switching diode
Rev. 04 — 8 January 2008 Product data sheet
NXP Semiconductors Product specification
Band-switching diode BA891
FEATURES
• Ultra small plastic SMD package
• Low diode capacitance: max. 1.05 pF
• Low diode forward resistance: max. 0.7 Ω
• Small inductance.
APPLICATIONS
• Low loss band-switching in VHF television tuners
• Surface mount band-switching circuits.
DESCRIPTION
The BA891 is a planar high performance band-switching
diode in the ultra small SOD523 SMD plastic package.
MARKING
PINNING
TYPE NUMBER MARKING CODE
BA891 7
PIN DESCRIPTION
1 cathode
2 anode
handbook, halfpage
12
Top view
MAM405
The marking band indicates the cathode.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
R
continuous reverse voltage − 35 V
I
F
continuous forward current − 100 mA
P
tot
total power dissipation T
s
=90°C − 715 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature −65 +150 °C
Rev. 04 - 8 January 2008
2 of 6
NXP Semiconductors Product specification
Band-switching diode BA891
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25°C unless otherwise specified.
Note
1. Guaranteed on AQL basis; inspection level S4, AQL 1.0.
SYMBOL PARAMETER VALUE UNIT
R
th j-s
thermal resistance from junction to soldering point 85 K/W
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
F
forward voltage I
F
=10mA − 1V
I
R
reverse current V
R
=30V − 20 nA
C
d
diode capacitance f = 1 MHz; note 1; see Fig.2
V
R
= 1 V 0.8 1.05 pF
V
R
= 3 V 0.65 0.9 pF
r
D
diode forward resistance f = 100 MHz; note 1; see Fig.3
I
F
= 3 mA 0.42 0.7 Ω
I
F
= 10 mA 0.28 0.5 Ω
L
S
series inductance 0.6 − nH
handbook, halfpage
0102030
1
0
0.8
0.6
0.4
0.2
MGL479
V
R
(V)
C
d
(pF)
Fig.2 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
=25°C.
handbook, halfpage
10
1
10
−1
MGL478
10
−1
110
I
F
(mA)
r
D
(Ω)
Fig.3 Diode forward resistance as a function of
forward current; typical values.
f = 100 MHz; T
j
=25°C.
Rev. 04 - 8 January 2008
3 of 6
P1-P3P4-P6

BA891,115

Mfr. #:
Buy BA891,115
Manufacturer:
NXP Semiconductors
Description:
PIN Diodes SWITCH BAND 35V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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