NCS2005SN1T1G

© Semiconductor Components Industries, LLC, 2016
January, 2016 − Rev. 1
1 Publication Order Number:
NCS2005/D
NCS2005
Operational Amplifier, Low
Power, 8 MHz GBW,
Rail-to-Rail Input-Output
The NCS2005 provides high performance in a wide range of
applications. The NCS2005 offers beyond rail−to−rail input range, full
rail−to−rail output swing, large capacitive load driving ability, and low
distortion. The inputs can be driven by voltages that exceed both
power supply rails, thus eliminating concerns over exceeding the
common−mode voltage range. The rail−to−rail output swing
capability provides the maximum possible dynamic range at the
output. This is particularly important when operating on low supply
voltages.
Operating on supplies of 2.2 V to 32 V, the NCS2005 is excellent for
a very wide range of applications in low power systems. With a supply
current of 1.3 mA, the 8 MHz gain−bandwidth of this device supports
applications where faster speeds are required. Placing the amplifier
right at the signal source reduces board size and simplifies signal
routing. The NCS2005 is available in a space−saving 5−pin SOT−23
package.
Features
Wide Power Supply Range: 2.2 V to 32 V
Common Mode Voltage Range Wider than Rail−to−Rail:
V
CM
= −0.1 V to 5.1 V @ V
S
= 5 V
Wide Gain−bandwidth: 8 MHz typical
Low Supply Current: 1.3 mA typical
Stable with a 1 nF Capacitor Load with a Phase Margin over 25° @
V
S
= 10 V
Available in a Space−saving 5−pin SOT23 Package
These devices are Pb−free, Halogen free/BFR Free and are RoHS
Compliant
Typical Applications
Active Filters
Voltage Referenced Buffers
Sensors and Instrumentation
Microphone Amplifiers
ASIC Input Drivers
Portable Communications
PCMCIA Cards
SOT23−5
SN SUFFIX
CASE 483
www.onsemi.com
1
5
1
2
3
5
4
OUT
V−
IN+
V+
IN
+
Device Package Shipping
ORDERING INFORMATION
NCS2005SN1T1G SOT−23
(Pb−Free)
3000 / Tape &
Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
PIN DIAGRAM
(Top View)
MARKING DIAGRAM
JFK = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
1
5
JFKAYWG
G
(Note: Microdot may be in either location)
NCS2005
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2
Table 1. PIN DESCRIPTION
Pin Name Type Description
1 OUT Output Amplifier output
2 V− Power Negative power supply
3 IN+ Input Non−inverting input of amplifier
4 IN− Input Inverting input of amplifier
5 V+ Power Positive power supply
Table 2. ABSOLUTE MAXIMUM RATINGS (Note 1)
rating
Symbol Value Units
Supply Voltage Range (V+ − V−) V
S
0 to 35 V
Input Voltage Range V
CM
(V−) − 0.3 V to (V+) + 0.3 V V
Differential Input Voltage Range V
diff
0 to 15 V
Input Pin Current I
IN
±10 mA
Output Pin Current (Note 2) I
OUT
±20 mA
Supply Current I
s
25 mA
Maximum Junction Temperature (Note 3) T
J(max)
+150 °C
Storage Temperature Range T
stg
−65 to +150 °C
ESD Capability (Note 4)
Human Body Model
Charged Device Model
HBM
CDM
4000
400
V
Moisture Sensitivity Level (Note 5) MSL Level 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
2. Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature can result in
exceeding the maximum allowed junction temperature of 150°C.
3. The maximum power dissipation is a function of T
J(MAX)
, T
JA
, and T
A
. The maximum allowable dissipation at any ambient temperature is
P
d
= (T
J(max)
– T
A
)/T
JA
. All numbers apply for packages soldered directly to a PC board.
4. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per JESD22−A114
ESD Charged Device Model tested per ANSI/ESD S5.3.1−2009
5. Moisture Sensitivity Level tested per IPC/JEDEC standard: J−STD−020A
Table 3. THERMAL CHARACTERISTICS
Parameter Symbol Package Single Layer Board Multi Layer Board Units
Thermal Resistance Junction−to−Ambient (Note 6)
q
JA
SOT−23−5 408 (Note 6) 355 (Note 7) °C/W
6. Values based on a 1S standard PCB according to JEDEC51−3 with 1.0 oz copper and a 300 mm
2
copper area
7. Values based on a 1S2P standard PCB according to JEDEC51−7 with 1.0 oz copper and a 100 mm
2
copper area
Table 4. OPERATING RANGES
Parameter Symbol Min Max Units
Power Supply Voltage V
S
2.2 32 V
Common Mode Input Voltage V
CM
(V−) − 0.1 (V+) + 0.1 V
Ambient Temperature T
A
−40 125 °C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NCS2005
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3
Table 5. ELECTRICAL CHARACTERISTICS AT 10 V SUPPLY Unless otherwise noted, values are referenced to T
A
= 25°C, V+ =
10 V, V− = 0 V, V
CM
= V+/2, and R
L
> 1 MW to V+/2. Boldface limits apply from T
A
= −40°C to 125°C. (Notes 8, 9)
Parameter
Test Conditions Symbol Min Typ Max Units
SUPPLY CHARACTERISTICS
Quiescent Supply Current
No load I
S
1.30 1.5
mA
1.7
Power Supply Rejection Ratio V
S
= 2.7 V to 30 V PSRR
113
dB
70
INPUT CHARACTERISTICS
Input Offset Voltage
V
OS
0.2 6
mV
6
Input Offset Voltage Drift
DV/DT
1
mV/°C
Input Bias Current V
CM
= 0 V I
IB
50 200
nA
200
V
CM
= 10 V
50 200
200
Input Offset Current V
CM
= 0 V I
OS
2 70
nA
80
V
CM
= 10 V
2 70
80
Input Resistance R
IN
95
MW
Input Capacitance C
IN
3 pF
Common Mode Rejection Ratio V
CM
= V− to V+ CMRR 73 84 dB
OUTPUT CHARACTERISTICS
High−level output voltage
I
L
= 10 mA V
OH
9.65 9.80 V
Low−Level Output Voltage I
L
= 10 mA V
OL
176 300 mV
Output Current Capability
Sourcing current
I
OUT
12
mA
Sinking current 20
DYNAMIC PERFORMANCE
Open Loop Voltage Gain
R
L
= 10 kW
A
VOL
83 107 dB
Gain−Bandwidth Product
R
L
= 10 kW
GBWP 8.5 MHz
Gain Margin
R
L
= 10 kW
A
M
5.5 dB
Phase Margin
R
L
= 10 kW y
M
65 °
Slew Rate
R
L
= 10 kW
SR 2.8
V/ms
Total Harmonic Distortion Plus Noise
f
IN
= 1 kHz, A
V
= 2, R
L
= 2 kW
THD+n 0.0015 %
NOISE PERFORMANCE
Voltage Noise Density
f = 1 kHz e
N
45 nV/Hz
8. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.
9. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T
J
= T
A
= 25°C.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

NCS2005SN1T1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Operational Amplifiers - Op Amps LOW POWER 8MHZ GBW R
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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