BC847BLP4-7B Datasheet BC847BLP4-7B, BC847BLP4-7 | P1-P3

BC847BLP4

Document number: DS31297 Rev. 7 - 2

1 of 5

www.diodes.com

May 2015

BC847BLP4

45V NPN SMALL SIGNAL TRANSISTOR IN DFN1006

Features

 BV

CEO

> 45V

 I

C

= 100mA High Collector Current

 P

D

= 1000mW Power Dissipation

 0.60mm

2

Package Footprint, 13 times Smaller than SOT23

 0.4mm Height Package Minimizing Off-Board Profile

 Complementary NPN Type BC857BLP4

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. "Green" Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: X2-DFN1006-3

 Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  NiPdAu.

Solderable per MIL-STD-202, Method 208

 Weight: 0.0008 grams (Approximate)

Ordering Information (Note 4)

Product

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

BC847BLP4-7

F1

7

8mm

3,000

BC847BLP4-7B

F1

7

8mm

10,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

Top View

Device Schematic

Bottom View

X2-DFN1006-3

Device Symbol

C

E

B

C

E

B

F1 = Product Type Marking Code

BC847BLP4-7

BC847BLP4-7B

Top View

Bar Denotes Base and Emitter Side

Top View

Dot Denotes Collector Side

F1

From date code 1527 (YYWW),

this changes to:

F1

Top View

Bar Denotes Base and Emitter Side

e4

BC847BLP4

Document number: DS31297 Rev. 7 - 2

2 of 5

www.diodes.com

May 2015

BC847BLP4

Absolute Maximum Ratings (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

50

V

Collector-Emitter Voltage

V

CEO

45

V

Emitter-Base Voltage

V

EBO

6.0

V

Collector Current

I

C

100

mA

Peak Pulse Collector Current

I

CM

200

mA

Thermal Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 5)

P

D

400

mW

(Note 6)

1000

Thermal Resistance, Junction to Ambient

(Note 5)

R



JA

310

C/W

(Note 6)

120

Thermal Resistance, Junction to Lead

(Note 7)

R



JL

120

°C/W

Operating and Storage and Temperature Range

T

J

, T

STG

-55 to +150

°C

ESD Ratings (Note 8)

Characteristic

Symbol

Value

Unit

JEDEC Class

Electrostatic Discharge - Human Body Model

ESD HBM

4,000

V

3A

Electrostatic Discharge - Machine Model

ESD MM

200

V

B

Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BV

CBO

50

—

V

I

C

= 10µA, I

B

= 0

Collector-Emitter Breakdown Voltage (Note 9)

BV

CEO

45

—

V

I

C

= 10mA, I

B

= 0

Emitter-Base Breakdown Voltage

BV

EBO

6

—

V

I

E

= 1µA, I

C

= 0

DC Current Gain

h

FE

200

350

450

—

V

CE

= 5.0V, I

C

= 2.0mA

Collector-Emitter Saturation Voltage (Note 9)

V

CE(sat)

—

80

200

250

600

mV

I

C

= 10mA, I

B

= 0.5mA

I

C

= 100mA, I

B

= 5.0mA

Base-Emitter Saturation Voltage (Note 9)

V

BE(sat)

—

700

900

—

mV

I

C

= 10mA, I

B

= 0.5mA

I

C

= 100mA, I

B

= 5.0mA

Base-Emitter Voltage (Note 9)

V

BE(on)

580

—

640

725

700

770

mV

V

CE

= 5.0V, I

C

= 2.0mA

V

CE

= 5.0V, I

C

= 10mA

Collector-Cutoff Current

I

CBO

—

15

5.0

nA

µA

V

CB

= 30V

V

CB

= 30V, T

A

= +150°C

Gain Bandwidth Product

f

T

100

—

MHz

V

CE

= 5.0V, I

C

= 10mA,

f = 100MHz

Collector-Base Capacitance

C

CBO

—

3.0

—

pF

V

CB

= 10V, f = 1.0MHz

Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air

conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.

6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.

7. Thermal resistance from junction to solder-point (on the exposed collector pad).

8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

BC847BLP4

Document number: DS31297 Rev. 7 - 2

3 of 5

www.diodes.com

May 2015

BC847BLP4

Typical Electrical Characteristics (@T

A

= +25°C, unless otherwise specified.)

Fig. 2 Typical Collector Current

vs. Collector-Emitter Voltage

0

20

40

60

80

100

0 1 2 3 4 5

V , COLLECTOR-EMITTER VOLTAGE (V)

CE

I , COLLECTOR CURRENT (mA)

C

I = 0.1mA

B

I = 0.2mA

B

I = 0.3mA

B

I = 0.4mA

B

I = 0.5mA

B

I , COLLECTOR CURRENT (mA)

Fig. 3

C

Typical DC Current Gain

vs. Collector Current

0

200

400

600

1 10 100 1,000

h , DC CURRENT GAIN

FE

I , COLLECTOR CURRENT (mA)

Fig. 4

C

Typical Collector-Emitter Saturation Voltage

vs. Collector Current

0

0.1

0.2

0.3

0.1 1 10 100

V , COLLECTOR-EMITTER

SATURATION VOLTAGE (V)

CE(SAT)

T = 150ºC

A

T = -55ºC

A

T = 85ºC

A

T = 25ºC

A

I /I = 20

CB

0

0.2

0.4

0.6

0.8

1.0

0.1 1 10 100

I , COLLECTOR CURRENT (mA)

C

V , BASE-EMITTER

SATURATION VOLTAGE (V)

BE(SAT)

Fig. 6 Typical Base-Emitter Saturation Voltage

vs. Collector Current

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

I /I = 20

CB

I , COLLECTOR CURRENT (mA)

Fig. 5

C

Typical Base-Emitter Turn-On Voltage

vs. Collector Current

0

0.2

0.4

0.6

0.8

1.0

0.1 1 10 100

V , BASE-EMITTER TURN-ON VOLTAGE (V)

BE(ON)

BC847BLP4-7B

BC847BLP4-7B

Products related to this Datasheet