RJK6025DPD Preliminary
R07DS0676EJ0100Rev.1.00 Page 2 of 6
Feb 17, 2012
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V
(BR)DSS
600 — — V I
D
= 10 mA, V
GS
= 0
Zero gate voltage drain current I
DSS
— — 1 A V
DS
= 600 V, V
GS
= 0
Gate to source leak current I
GSS
— — ±0.1 A V
GS
= 30 V, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
3 — 5 V V
DS
= 10 V, I
D
= 1 mA
Static drain to source on state
resistance
R
DS(on)
— 13.5 17.5 I
D
= 0.5 A, V
GS
= 10 V
Note3
Input capacitance Ciss — 37.5 — pF
Output capacitance Coss — 7.5 — pF
Reverse transfer capacitance Crss — 0.9 — pF
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Turn-on delay time t
d(on)
— 30 — ns
Rise time t
r
— 14.5 — ns
Turn-off delay time t
d(off)
— 48 — ns
Fall time t
f
— 77 — ns
I
D
= 0.2 A
V
GS
= 10 V
R
L
= 1500
Rg = 10
Total gate charge Qg — 5.0 — nC
Gate to source charge Qgs — 0.7 — nC
Gate to drain charge Qgd — 3.3 — nC
V
DD
= 480 V
V
GS
= 10 V
I
D
= 1.0 A
Body-drain diode forward voltage V
DF
— 0.85 1.45 V I
F
= 1.0 A, V
GS
= 0
Note3
Body-drain diode reverse recovery time t
rr
— 230 — ns
I
F
= 0.4 A, V
GS
= 0
di
F
/dt = 100 A/s
Notes: 3. Pulse test
4. Since this device is equipped with high voltage FET chip (V
DSS
600 V), high voltage may be supplied.
Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal.
5. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
