Data Sheet No. PD60046-S
Typical Connection
Product Summary
V
OFFSET
600V max.
I
O
+/- 130 mA / 270 mA
V
OUT
10 - 20V
t
on/off
(typ.) 680 & 150 ns
Deadtime (typ.) 520 ns
HALF-BRIDGE DRIVER
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Internally set deadtime
High side output in phase with input
Shut down input turns off both channels
Matched propagation delay for both channels
Also available LEAD-FREE
Description
The IR2104(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and low
side referenced output channels. Proprietary HVIC and
latch immune CMOS technologies enable ruggedized
monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic.
The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which
operates from 10 to 600 volts.
www.irf.com 1
IR2104
(
S
) & (PbF)
V
CC
V
B
V
S
HO
LOCOM
IN
SD
SD
IN
up to 600V
TO
LOAD
V
CC
(Refer to Lead Assignment for correct pin configuration) This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.
Packages
8 Lead PDIP
IR2104
8 Lead SOIC
IR2104S
2
IR2104
(
S
) & (PbF)
www.irf.com
Symbol Definition Min. Max. Units
V
B
High side floating absolute voltage -0.3 625
V
S
High side floating supply offset voltage V
B
- 25 V
B
+ 0.3
V
HO
High side floating output voltage V
S
- 0.3 V
B
+ 0.3
V
CC
Low side and logic fixed supply voltage -0.3 25
V
LO
Low side output voltage -0.3 V
CC
+ 0.3
V
IN
Logic input voltage (IN & SD) -0.3 V
CC
+ 0.3
dV
s
/dt Allowable offset supply voltage transient 50 V/ns
P
D
Package power dissipation @ T
A
+25°C (8 lead PDIP) 1.0
(8 lead SOIC) 0.625
Rth
JA
Thermal resistance, junction to ambient (8 lead PDIP) 125
(8 lead SOIC) 200
T
J
Junction temperature 150
T
S
Storage temperature -55 150
T
L
Lead temperature (soldering, 10 seconds) 300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions.
Symbol Definition Min. Max. Units
V
B
High side floating supply absolute voltage V
S
+ 10 V
S
+ 20
V
S
High side floating supply offset voltage Note 1 600
V
HO
High side floating output voltage V
S
V
B
V
CC
Low side and logic fixed supply voltage 10 20
V
LO
Low side output voltage 0 V
CC
V
IN
Logic input voltage (IN &
SD
)0V
CC
T
A
Ambient temperature -40 125
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Recommended Operating Conditions
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
°C
V
V
W
°C/W
°C
3
IR2104
(
S
) & (PbF)
www.irf.com
Symbol Definition Min. Typ. Max. Units Test Conditions
V
IH
Logic “1” (HO) & Logic “0” (LO) input voltage 3 V
CC
= 10V to 20V
V
IL
Logic “0” (HO) & Logic “1” (LO) input voltage 0.8 V
CC
= 10V to 20V
V
SD,TH+
SD input positive going threshold 3 V
CC
= 10V to 20V
V
SD,TH-
SD input negative going threshold 0.8 V
CC
= 10V to 20V
V
OH
High level output voltage, V
BIAS
- V
O
100 I
O
= 0A
V
OL
Low level output voltage, V
O
100 I
O
= 0A
I
LK
Offset supply leakage current 50 V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current 30 55 V
IN
= 0V or 5V
I
QCC
Quiescent V
CC
supply current 150 270 V
IN
= 0V or 5V
I
IN+
Logic “1” input bias current 3 10 V
IN
= 5V
I
IN-
Logic “0” input bias current 1 V
IN
= 0V
V
CCUV+
V
CC
supply undervoltage positive going 8 8.9 9.8
threshold
V
CCUV-
V
CC
supply undervoltage negative going 7.4 8.2 9
threshold
I
O+
Output high short circuit pulsed current 130 210 V
O
= 0V
PW10 µs
I
O-
Output low short circuit pulsed current 270 360 V
O
= 15V
PW10 µs
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay 680 820 V
S
= 0V
t
off
Turn-off propagation delay 150 220 V
S
= 600V
t
sd
Shutdown propagation delay 160 220
t
r
Turn-on rise time 100 170
t
f
Turn-off fall time 50 90
DT Deadtime, LS turn-off to HS turn-on & 400 520 650
HS turn-on to LS turn-off
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 1000 pF and T
A
= 25°C unless otherwise specified.
V
mV
V
mA
MT Delay matching, HS & LS turn-on/off 60
ns
µA

IR2104STR

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC DRIVER HIGH/LOW SIDE 8-SOIC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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