SIB417AEDK-T1-GE3 Datasheet SIB417AEDK-T1-GE3 | P1-P3

Vishay Siliconix

SiB417AEDK

Document Number: 63899

S12-2333-Rev. A, 01-Oct-12

www.vishay.com

1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

P-Channel 1.2 V (G-S) MOSFET

FEATURES

• TrenchFET

®

Power MOSFET

• Thermally Enhanced PowerPAK

®

SC-75 Package

- Small Footprint Area

- Low On-Resistance

• 100 % R

g

Tested

• Typical ESD Protection 2500 V

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

•

Load Switch for Portable Devices,

Smart Phones, and Tablet PCs

- Low Voltage Drop

- Space Savings

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 5 s.

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 105 °C/W.

g. Based on T

C

= 25 °C.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

() Max.

I

D

(A)

g

Q

g

(Typ.)

- 8

0.032 at V

GS

= - 4.5 V

- 9

a

11.3 nC

0.045 at V

GS

= - 2.5 V

- 9

a

0.063 at V

GS

= - 1.8 V

- 9

a

0.120 at V

GS

= - 1.5 V

- 8.8

0.230 at V

GS

= - 1.2 V

- 6.4

PowerPAK SC-75-6L-Single

6

5

4

1

2

3

D

G

S

1.60 mm

Ordering Information:

SiB417AEDK-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

S

D

G

Marking Code

X X X

B N X

Lot Traceability

and Date code

Part # code

ABSOLUTE MAXIMUM RATINGS (T

A

= 25 °C, unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage

V

DS

- 8

V

Gate-Source Voltage

V

GS

± 5

Continuous Drain Current (T

J

= 150 °C)

T

C

= 25 °C

I

D

- 9

a

A

T

C

= 70 °C

- 9

a

T

A

= 25 °C

- 7.2

b, c

T

A

= 70 °C

- 5.7

b, c

Pulsed Drain Current (t = 300 µs)

I

DM

- 15

Continuous Source-Drain Diode Current

T

C

= 25 °C

I

S

- 9

a

T

A

= 25 °C

- 2

b, c

Maximum Power Dissipation

T

C

= 25 °C

P

D

13

W

T

C

= 70 °C

8.4

T

A

= 25 °C

2.4

b, c

T

A

= 70 °C

1.6

b, c

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

b, f

t  5 s

R

thJA

41 51

°C/W

Maximum Junction-to-Case (Drain) Steady State

R

thJC

7.5 9.5

www.vishay.com

2

Document Number: 63899

S12-2333-Rev. A, 01-Oct-12

Vishay Siliconix

SiB417AEDK

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

Notes:

a. Pulse test; pulse width  300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= - 250 µA

- 8 V

V

DS

Temperature Coefficient V

DS

/T

J

I

D

= - 250 µA

- 6.1

mV/°C

V

GS(th)

Temperature Coefficient V

GS(th)

/T

J

2.1

Gate-Source Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 0.35 - 1 V

Gate-Source Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 5 V

± 20

µA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 8 V, V

GS

= 0 V

- 1

V

DS

= - 8 V, V

GS

= 0 V, T

J

= 55 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

- 5 V, V

GS

= - 4.5 V

- 15 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 3 A

0.0265 0.0320



V

GS

= - 2.5 V, I

D

= - 3 A

0.0360 0.0450

V

GS

= - 1.8 V, I

D

= - 1 A

0.0500 0.0630

V

GS

= - 1.5 V, I

D

= - 0.5 A

0.0600 0.1200

V

GS

= - 1.2 V, I

D

= - 0.5 A

0.1000 0.2300

Forward Transconductance

a

g

fs

V

DS

= - 4 V, I

D

= - 7.4 A

18 S

Dynamic

b

Input Capacitance

C

iss

V

DS

= - 4 V, V

GS

= 0 V, f = 1 MHz

878

pFOutput Capacitance

C

oss

415

Reverse Transfer Capacitance

C

rss

735

Total Gate Charge

Q

g

V

DS

= - 4 V, V

GS

= - 5 V, I

D

= - 7.4 A

12.3 18.5

nC

V

DS

= - 4 V, V

GS

= - 4.5 V, I

D

= - 7.4 A

11.3 17

Gate-Source Charge

Q

gs

1.35

Gate-Drain Charge

Q

gd

3.42

Gate Resistance

R

g

f = 1 MHz 1.3 6.5 13 

Turn-O n D e l ay T i me

t

d(on)

V

DD

= - 4 V, R

L

= 0.68 

I

D

 - 5.9 A, V

GEN

= - 4.5 V, R

g

= 1 

19 29

ns

Rise Time

t

r

18 27

Turn-Off Delay Time

t

d(off)

32 48

Fall Time

t

f

19 29

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

I

S

T

C

= 25 °C

- 9

A

Pulse Diode Forward Current

I

SM

- 15

Body Diode Voltage

V

SD

I

S

= - 5.9 A, V

GS

= 0 V

- 0.8 - 1.2 V

Body Diode Reverse Recovery Time

t

rr

I

F

= - 5.9 A, dI/dt = 100 A/µs, T

J

= 25 °C

32 48 ns

Body Diode Reverse Recovery Charge

Q

rr

13 20 nC

Reverse Recovery Fall Time

t

a

14

ns

Reverse Recovery Rise Time

t

b

18

Document Number: 63899

S12-2333-Rev. A, 01-Oct-12

www.vishay.com

3

Vishay Siliconix

SiB417AEDK

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

For technical questions, contact: pmostechsupport@vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Gate Source Voltage vs. Gate Current

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

0.000

0.003

0.006

0.009

0.012

0.015

0 2 4 5 7 9

I

GSS

- Gate Current (mA)

V

GS

- Gate-Source Voltage (V)

T

J

= 25 °C

0

3

6

9

12

15

0 0.5 1 1.5 2

I

D

- Drain Current (A)

V

DS

- Drain-to-Source Voltage (V)

V

GS

= 1.5 V

V

GS

= 5V thru 2V

V

GS

= 1 V

0

0.05

0.1

0.15

0.2

0 3 6 9 12 15

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 1.8 V

V

GS

= 2.5 V

V

GS

= 1.5 V

V

GS

= 4.5 V

V

GS

= 1.2 V

Gate Source Voltage vs. Gate Current

Transfer Characteristics

Capacitance

10

-2

10

-3

10

-4

10

-5

10

-6

10

-7

10

-8

10

-9

0 3 6 9 12

I

GSS

- Gate Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

J

= 150 °C

T

J

= 25 °C

0

0.2

0.4

0.6

0.8

1

0 0.25 0.5 0.75 1 1.25

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= 25 °C

T

C

= 125 °C

T

C

= - 55 °C

0

300

600

900

1200

1500

0 2 4 6 8

C - Capacitance (pF)

V

DS

- Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

SIB417AEDK-T1-GE3

SIB417AEDK-T1-GE3

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