SI2333
2016/03/11
www.mccsemi.com
2 of 4
Electrical characteristics (T
a
=25Я unless otherwise noted)
Revision:
A
Parameter Symbol Test Condition Min Typ Max Unit
Static
Characteristics
Drain-source breakdown voltage V
(BR)DSS
V
GS
= 0V, I
D
=-250µA --12 V
Zero gate voltage drain current I
DSS
V
DS
=-12V,V
GS
= 0V
--1
µA
Gate-body leakage current I
GSS
V
GS
=±8V, V
DS
= 0V 0.1±0.1±
Gate threshold voltage (note 3)
GS(th)
VV
DS
=V
GS
, I
D
=-250µA
-
-0.4
-
-1 V
V
GS
=-4.5V, I
D
=-5A 28
V
GS
=-3.7V, I
D
=-4.6A 32
V
GS
=-2.5V, I
D
=-4.3A 40
V
GS
=-1.8V, I
D
=-1A 63
Drain-source on-resistance (note 4) DS(o
R
n)
V
GS
=-1.5V, I
D
=-0.5A 150
m
Forward tranconductance (note 3) FS
gV
DS
=-5V, I
D
=-5A 18 S
Dynamic characteristics (note 4)
Input Capacitance C
iss
1275 pF
Output Capacitance C
oss
255
pF
Reverse Transfer Capacitance C
rss
V
DS =-6V,VGS =0V,f =1MHz
236
pF
Gate resistance R
g
f =1MHz
1.9 19
Total Gate Charge Q
g
4 2141
nC
Gate-Source Charge Q
gs
2.3
nC
Gate-Drain Charge Q
gd
VDS =-6V,VGS =-4.5V,ID=-5A
3.6
nC
Turn-on delay time t
d(on)
6 4262 ns
Turn-on rise time t
r
2424 4 ns
Turn-off delay time td(off) 5 7454 ns
Turn-off fall time t
f
V
DD
=-6V,V
GEN
=-4.5V,I
D
=-4A
R
L
=6,R
GEN
=1
2020 3 ns
Source-Drain Diode characteristics
Diode forward current I
S
T
C
=25℃
-
-1.4 A
Diode pulsed forward current I
SM
-
-20 A
Diode Forward voltage (note 3)
V
DS
GS
V =0V, I
S
=-4A
-
-1.2 V
Diode reverse recovery time (note 4)
t
rr
4
48
242 ns
Diode reverse recovery charge (note 4)
Q
rr
I
F
=-4A,dI/dt=100A/µs
88 16 nC
Notes : 3. Pulse test; pulse width
300s, duty cycle2%.
4. Guaranteed by design, not subject to production testing.
Micro Commercial Components
M C C
R
