SZESD7951ST5G Datasheet SZESD7951ST5G, ESD7951ST5G | P1-P3

November, 2017 − Rev. 5

1 Publication Order Number:

ESD7951S/D

ESD7951S

ESD Protection Diode

Ultra−Low Capacitance

The ESD7951 is designed to protect voltage sensitive components that

require ultra−low capacitance from ESD and transient voltage events.

Excellent clamping capability, low capacitance, low leakage, and fast

response time, make these parts ideal for ESD protection on designs

where board space is at a premium. Because of its low capacitance, it is

suited for use in high frequency designs such as USB 2.0 high speed and

antenna line applications.

Specification Features:

• Ultra Low Capacitance 0.5 pF

• Low Clamping Voltage

• Small Body Outline Dimensions:

0.039″ x 0.024″ (1.00 mm x 0.60 mm)

• Low Body Height: 0.016″ (0.4 mm)

• Stand−off Voltage: 5 V

• Low Leakage

• Response Time is Typically < 1.0 ns

• IEC61000−4−2 Level 4 ESD Protection

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

• This is a Pb−Free Device

Mechanical Characteristics:

CASE:

Void-free, transfer-molded, thermosetting plastic

Epoxy Meets UL 94 V−0

LEAD FINISH: 100% Matte Sn (Tin)

MOUNTING POSITION: Any

QUALIFIED MAX REFLOW TEMPERATURE: 260°C

Device Meets MSL 1 Requirements

MAXIMUM RATINGS

Rating Symbol Value Unit

IEC 61000−4−2 (ESD) Contact

Air

±8

±15

Total Power Dissipation on FR−5 Board

(Note 1) @ T

= 25°C

°P

° 150 mW

Storage Temperature Range T

stg

−55 to +150 °C

Junction Temperature Range T

−55 to +125 °C

Lead Solder Temperature − Maximum

(10 Second Duration)

260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.62 in.

See Application Note AND8308/D for further description of survivability specs.

Device Package Shipping

†

ORDERING INFORMATION

SOD−923

CASE 514AB

ESD7951ST5G,

SZESD7951ST5G

SOD−923

(Pb−Free)

8000 / Tape &

Reel

MARKING DIAGRAM

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

AA = Specific Device Code

M = Date Code

www.onsemi.com

AA M

PIN 1. CATHODE

2. ANODE

ESD7951S

www.onsemi.com

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Symbol

Parameter

Maximum Reverse Peak Pulse Current

Clamping Voltage @ I

RWM

Working Peak Reverse Voltage

Maximum Reverse Leakage Current @ V

RWM

Breakdown Voltage @ I

Test Current

Forward Current

Forward Voltage @ I

Peak Power Dissipation

C Capacitance @ V

= 0 and f = 1.0 MHz

*See Application Note AND8308/D for detailed explanations of

datasheet parameters.

Bi−Directional

RWM

ELECTRICAL CHARACTERISTICS (T

= 25°C unless otherwise noted)

Device*

Device

Marking

RWM

(V)

(mA)

@ V

RWM

(V) @ I

(Note 2)

C (pF)

(V)

@ I

= 1 A

(Note 3)

Max Max Min mA Typ Max Max

Per IEC61000−4−2

(Note 4)

ESD7951ST5G AA 5.0 1.0 5.4 1.0 0.5 0.9 12.9 Figures 1 and 2

See Below

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

*Includes SZ−prefix devices where applicable.

2. V

is measured with a pulse test current I

at an ambient temperature of 25°C.

3. Surge current waveform per Figure 5.

4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.

Figure 1. ESD Clamping Voltage Screenshot

Positive 8 kV Contact per IEC61000−4−2

Figure 2. ESD Clamping Voltage Screenshot

Negative 8 kV Contact per IEC61000−4−2

ESD7951S

www.onsemi.com

IEC 61000−4−2 Spec.

Level

Test Volt-

age (kV)

First Peak

Current

(A)

Current at

30 ns (A)

Current at

60 ns (A)

1 2 7.5 4 2

2 4 15 8 4

3 6 22.5 12 6

4 8 30 16 8

peak

90%

10%

IEC61000−4−2 Waveform

100%

I @ 30 ns

I @ 60 ns

= 0.7 ns to 1 ns

Figure 3. IEC61000−4−2 Spec

Figure 4. Diagram of ESD Test Setup

50 W

Cable

Device

Under

Test

Oscilloscope

ESD Gun

50 W

The following is taken from Application Note

AND8308/D − Interpretation of Datasheet Parameters

for ESD Devices.

ESD Voltage Clamping

For sensitive circuit elements it is important to limit the

voltage that an IC will be exposed to during an ESD event

to as low a voltage as possible. The ESD clamping voltage

is the voltage drop across the ESD protection diode during

an ESD event per the IEC61000−4−2 waveform. Since the

IEC61000−4−2 was written as a pass/fail spec for larger

systems such as cell phones or laptop computers it is not

clearly defined in the spec how to specify a clamping voltage

at the device level. ON Semiconductor has developed a way

to examine the entire voltage waveform across the ESD

protection diode over the time domain of an ESD pulse in the

form of an oscilloscope screenshot, which can be found on

the datasheets for all ESD protection diodes. For more

information on how ON Semiconductor creates these

screenshots and how to interpret them please refer to

AND8307/D.

Figure 5. 8 x 20 ms Pulse Waveform

100

020406080

t, TIME (ms)

% OF PEAK PULSE CURRENT

PULSE WIDTH (t

) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAY = 8 ms

PEAK VALUE I

RSM

@ 8 ms

HALF VALUE I

RSM

/2 @ 20 ms

P1-P3 P4-P4

SZESD7951ST5G

Mfr. #:

Buy SZESD7951ST5G

Manufacturer:

ON Semiconductor

Description:

TVS Diodes / ESD Suppressors SOD-923 EUT SNGL LPS PBF

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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SZESD7951ST5G

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