OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

PIMN31,115

P1-P3P4-P6P7-P9P10-P12
PIMN31_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 19 June 2007 3 of 11
NXP Semiconductors
PIMN31
500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Per device
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 420 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
FR4 PCB, standard footprint
Fig 1. Power derating curve
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
T
amb
(°C)
−75 17512525 75−25
006aab054
200
300
100
400
500
P
tot
(mW)
0
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 431 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
- - 105 K/W
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 298 K/W
PIMN31_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 19 June 2007 4 of 11
NXP Semiconductors
PIMN31
500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ
7. Characteristics
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT457 (SC-74);
typical values
006aaa494
10
−5
1010
−2
10
−4
10
2
10
−1
t
p
(s)
10
−3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0.10
0.05
0.02
0.01
0
δ = 1
0.75
0.50
0.33
0.20
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
collector-base cut-off
current
V
CB
=50V; I
E
= 0 A - - 100 nA
I
CEO
collector-emitter
cut-off current
V
CE
=50V; I
B
= 0 A - - 0.5 µA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 0.72 mA
h
FE
DC current gain V
CE
=5V; I
C
=50mA 70 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 50 mA; I
B
= 2.5 mA - - 0.3 V
V
I(off)
off-state input voltage V
CE
=5V; I
C
= 100 µA 0.3 0.6 1 V
V
I(on)
on-state input voltage V
CE
= 0.3 V; I
C
= 20 mA 0.4 0.8 1.4 V
R1 bias resistor 1 (input) 0.7 1 1.3 kΩ
R2/R1 bias resistor ratio 9 10 11
C
c
collector capacitance V
CB
=10V;I
E
=i
e
=0A;
f=1MHz
-7-pF
PIMN31_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 19 June 2007 5 of 11
NXP Semiconductors
PIMN31
500 mA, 50 V NPN/NPN double RET; R1 = 1 kΩ, R2 = 10 kΩ
V
CE
=5V
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
I
C
/I
B
=20
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
Fig 3. DC current gain as a function of collector
current; typical values
Fig 4. Collector-emitter saturation voltage as a
function of collector current; typical values
I
C
/I
B
=50
(1) T
amb
= 100 °C
(2) T
amb
=25°C
(3) T
amb
= −40 °C
Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values
006aaa314
10
2
10
10
3
h
FE
1
I
C
(mA)
10
−1
10
3
10
2
110
(1)
(2)
(3)
006aaa315
I
C
(mA)
110
3
10
2
10
10
−1
V
CEsat
(V)
10
−2
(1)
(2)
(3)
006aab055
I
C
(mA)
110
3
10
2
10
10
−1
1
V
CEsat
(V)
10
−2
(1)
(2)
(3)
P1-P3P4-P6P7-P9P10-P12

PIMN31,115

Mfr. #:
Buy PIMN31,115
Manufacturer:
Nexperia
Description:
Bipolar Transistors - Pre-Biased DOUBLE RET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet