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NTD30N02G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1 Publication Order Number:
NTD30N02/D
NTD30N02
Power MOSFET
30 Amps, 24 Volts
N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Pb−Free Packages are Available
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
24 Vdc
Gate−to−Source Voltage − Continuous V
GS
"20 Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Single Pulse (t
p
v10 ms)
I
D
I
DM
30
100
Adc
Apk
Total Power Dissipation @ T
A
= 25°C P
D
75 W
Operating and Storage Temperature Range T
J
, T
stg
−55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 24 Vdc, V
GS
= 10 Vdc,
L = 1.0 mH, I
L
(pk) = 10 A, R
G
= 25 W)
E
AS
50 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
R
q
JC
R
q
JA
R
q
JA
1.65
67
120
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1 in. pad size,
(Cu Area 1.127 sq in).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 sq in).
30 AMPERES
24 VOLTS
R
DS(on)
= 11.2 mW (Typ.)
N−Channel
D
S
G
http://onsemi.com
Device Package Shipping
†
ORDERING INFORMATION
NTD30N02 DPAK 75 Units/Rail
MARKING
DIAGRAM
NTD30N02T4 DPAK 2500 Tape & Reel
1
2
3
4
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Gate
3
Source
2
Drain
4
Drain
YWW
D30
N02G
DPAK
CASE 369C
STYLE 2
D30N02 = Device Code
Y = Year
WW = Work Week
G = Pb−Free Device
NTD30N02G DPAK
(Pb−Free)
75 Units/Rail
NTD30N02T4G DPAK
(Pb−Free)
2500 Tape & Reel
NTD30N02
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
24
−
26.5
25.5
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 24 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 125°C)
I
DSS
−
−
−
−
−
−
0.8
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
2.1
−4.1
3.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 30 Adc)
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 4.5 Vdc, I
D
= 15 Adc)
R
DS(on)
−
−
−
−
11.2
20
14.5
14.5
24
mW
Forward Transconductance (Note 3) (V
DS
= 10 Vdc, I
D
= 15 Adc) g
FS
− 20 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 20 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 1000 − pF
Output Capacitance
C
oss
− 425 −
Transfer Capacitance C
rss
− 175 −
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
(V
DD
= 20 Vdc, I
D
= 30 Adc,
V
GS
= 10 Vdc, R
G
= 2.5 W)
t
d(on)
− 7.0 15 ns
Rise Time t
r
− 28 55
Turn−Off Delay Time t
d(off)
− 22 35
Fall Time t
f
− 12 20
Turn−On Delay Time
(V
DD
= 20 Vdc, I
D
= 15 Adc,
V
GS
= 4.5 Vdc, R
G
= 2.5 W)
t
d(on)
− 12.5 − ns
Rise Time t
r
− 115 −
Turn−Off Delay Time t
d(off)
− 15 −
Fall Time t
f
− 17 −
Gate Charge
(V
DS
= 20 Vdc, I
D
= 30 Adc,
V
GS
= 4.5 Vdc) (Note 3)
Q
T
− 14.4 20 nC
Q
1
− 4.0 −
Q
2
− 8.5 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (I
S
= 15 Adc, V
GS
= 0 Vdc)
(I
S
= 30 Adc, V
GS
= 0 Vdc) (Note 3)
(I
S
= 15 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
−
−
−
0.95
1.10
0.80
1.2
−
−
Vdc
Reverse Recovery Time
(I
S
= 30 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
t
rr
− 30 −
ns
t
a
− 14.5 −
t
b
− 15.5 −
Reverse Recovery Stored Charge Q
RR
− 0.013 −
mC
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
NTD30N02
http://onsemi.com
3
10 4030
0.03
0.02
0.01
20 50
0.04
0.07
60
1.6
1.2
1.4
1
0.8
0.6
0.01
100
08
20
21
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
0
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
254
0.01
0
36
Figure 3. On−Resistance versus
Gate−to−Source Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
60
−50 50250−25 75 125100
18
41612 248
3
10
30
8 V
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 10 V
150
V
GS
= 0 V
I
D
= 15 A
V
GS
= 10 V
40
0.02
0.04
V
GS
= 9 V
I
D
= 15 A
T
J
= 25°C
10
T
J
= 150°C
T
J
= 100°C
10
0
60
30
40
4
T
J
= 25°C
20
10
7 V
5 V
4 V
3.4 V
3 V
4567 2 3 5
0.03
78
0.05
0.06
50
3.6 V
4.2 V
4.6 V
5.4 V
6 V
T
J
= 25°C
67
20
50
9
V
GS
= 4.5 V
1
0.1
P1-P3P4-P5

NTD30N02G

Mfr. #:
Buy NTD30N02G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET 24V 0.014R
Lifecycle:
New from this manufacturer.
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