IS62C51216AL-55TLI

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 7
Rev. B
11/23/2010
IS62C51216AL, IS65C51216AL
DATA VALID
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
DQ0-D15
ADDRESS
AC WAVEFORMS
READ CYCLE NO. 1
(1,2) 
(Address Controlled) (CS1 = OE = VIL, cs2 = WE = VIH, UB or LB = VIL)
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
45 ns
55 ns
70 ns
Symbol  Parameter  Min. Max. Min. Max. Min. Max. Unit
trc Read Cycle Time 45 55 70 ns
taa Address Access Time 45 55 70 ns
toHa
3
Output Hold Time 10 10 10 ns
tacs1/tacs2 CS1/CS2 Access Time 45 55 70 ns
tdoe OE Access Time 20 25 35 ns
tHzoe
(2)
OE to High-Z Output 15 20 25 ns
tLzoe
(2)
OE to Low-Z Output 5 5 5 ns
tHzcs1/tHzcs2
(2)
CS1/CS2 to High-Z Output 0 15 0 20 0 25 ns
tLzcs1/tLzcs2
(2)
CS1/CS2 to Low-Z Output 10 10 10 ns
tba LB, UB Access Time 45 55 70 ns
tHzb LB, UB to High-Z Output 0 15 0 20 0 25 ns
tLzb LB, UB to Low-Z Output 0 0 0 ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. 10ns for CMOS Loading. 8ns @ AC Loading.
8 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
11/23/2010
IS62C51216AL, IS65C51216AL
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACE1/
t
ACE2
t
LZCE1/
t
LZCE2
t
HZOE
HIGH-Z
DATA VALID
t
HZCS1/
t
HZCS1
ADDRESS
OE
CS1
s
CS2
s
DOUT
LB
s
,
UB
s
t
HZB
t
BA
t
LZB
AC WAVEFORMS
READ CYCLE NO. 2
(1,3)
(CS1, CS2, OE, AND UB/LB Controlled)
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CS1, UB, or LB =
VIL. cs2=WE=VIH.
3. Address is valid prior to or coincident with CS1 LOW transition.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 9
Rev. B
11/23/2010
IS62C51216AL, IS65C51216AL
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CS1 , CS2 and WE inputs and at
least one of the LB and UB inputs being in the LOW state.
2. WRITE = (CS1) [ (LB) = (UB) ] (WE).
AC WAVEFORMS
WRITE CYCLE NO. 1
(1,2)
(CS1 Controlled, OE = HIGH or LOW)
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range)
45ns
55 ns
70 ns
Symbol  Parameter    Min. Max.   Min. Max.   Min. Max. Unit
twc Write Cycle Time 45 55 70 ns
tscs1/tscs2 CS1/CS2 to Write End 35 45 60 ns
taw Address Setup Time to Write End 35 45 60 ns
tHa Address Hold from Write End 0 0 0 ns
tsa Address Setup Time 0 0 0 ns
tPwb LB, UB Valid to End of Write 35 45 60 ns
tPwe
(4)
WE Pulse Width 35 40 50 ns
tsd Data Setup to Write End 25 30 30 ns
tHd Data Hold from Write End 0 0 0 ns
tHzwe
(3)
WE LOW to High-Z Output 20 20 30 ns
tLzwe
(3)
WE HIGH to Low-Z Output 5 5 5 ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to
3.0V and output loading specified in Figure 1.
2.
The internal write time is defined by the overlap of CS1 LOW, CS2 HIGH and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to
terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the
write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
4. t
Pwe
> tHzwe + tsd when OE is LOW.

IS62C51216AL-55TLI

Mfr. #:
Manufacturer:
ISSI
Description:
SRAM 8M (512Kx8) 55ns 5V Async SRAM 5v
Lifecycle:
New from this manufacturer.
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