MJD29CTF

©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001

MJD29/29C

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

Electrical Characteristics

T

C

=25°C unless otherwise noted

* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%

Symbol Parameter Value Units

V

CBO

Collector-Base Voltage

: MJD29

: MJD29C

40

100

V

V

V

CEO

Collector-Emitter Voltage

: MJD29

: MJD29C

40

100

V

V

V

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current (DC) 1 A

I

CP

Collector Current (Pulse) 3 A

I

B

Base Current 0.4 A

P

C

Collector Dissipation (T

C

=25°C) 15 W

Collector Dissipation (T

a

=25°C) 1.56 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 65 ~ 150 °C

Symbol Parameter Test Condition Min. Max. Units

V

CEO

(sus) *Collector-Emitter Sustaining Voltage

: MJD29

: MJD29C

I

C

= 30mA, I

B

= 0 40

100

V

V

I

CEO

Collector Cut-off Current

: MJD29

: MJD29C

V

CE

= 40V, I

B

= 0

V

CE

= 60V, I

B

= 0

50

50

µA

µA

I

CES

Collector Cut-off Current

: MJD29

: MJD29C

V

CE

= 40V, V

BE

= 0

V

CE

= 100V, V

BE

= 0

20

20

µA

µA

I

EBO

Emitter Cut-off Current V

BE

= 5V, I

C

= 0 1 mA

h

FE

*DC Current Gain V

CE

= 4V, I

C

= 0.2A

V

CE

= 4V, I

C

= 1A

40

15 75

V

CE

(sat) *Collector-Emitter Saturation Voltage I

C

= 1A, I

B

= 125mA 0.7 V

V

BE

(on) *Base-Emitter ON Voltage V

CE

= 4A, I

C

= 1A 1.3 V

f

T

Current Gain Bandwidth Product V

CE

= 10V, I

C

= 200mA 3 MHz

MJD29/29C

General Purpose Amplifier

Low Speed Switching Applications

• Load Formed for Surface Mount Application (No Suffix)

• Straight Lead (I-PAK, “- I” Suffix)

• Electrically Similar to Popular TIP29 and TIP29C

1.Base 2.Collector 3.Emitter

D-PAK I-PAK

11

©2001 Fairchild Semiconductor Corporation

MJD29/29C

Rev. A2, June 2001

Typical Characteristics

Figure 1. DC current Gain Figure 2. Turn On Time

Figure 3. Turn Off Time Figure 4. Safe Operating Area

Figure 5. Power Derating

0.01 0.1 1 10

1

10

100

1000

V

CE

= 2V

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

0.01 0.1 1 10

0.01

0.1

1

10

t

STG

t

F

, V

CC

=10V

t

F

, V

CC

=30V

I

C

=10I

B

t

F

, t

STG

,[

µ

s],TURN OFF TIME

I

C

[A], COLLECTOR CURRENT

0.01 0.1 1 10

0.01

0.1

1

10

t

D

, V

BE

(off)=2V

t

R

, V

CC

=10V

t

R

, V

CC

=30V

I

C

=10I

B

t

R

, t

D

[

µ

s],TURN ON TIME

I

C

[A], COLLECTOR CURRENT

1 10 100 1000

0.01

0.1

1

10

100

MJD29C

MJD29

500

µ

s

100

µ

s

1ms

DC

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

0

5

10

15

20

P

C

[W], POWER DISSIPATION

T

C

[

o

C], CASE TEMPERATURE

Package Demensions

©2001 Fairchild Semiconductor Corporation Rev. A2, June 2001

MJD29/29C

Dimensions in Millimeters

6.60 ±0.20

2.30 ±0.10

0.50 ±0.10

5.34 ±0.30

0.70 ±0.20

0.60 ±0.20

0.80 ±0.20

9.50 ±0.30

6.10 ±0.20

2.70 ±0.20

9.50 ±0.30

6.10 ±0.20

2.70 ±0.20

MIN0.55

0.76 ±0.10

0.50 ±0.10

1.02 ±0.20

2.30 ±0.20

6.60 ±0.20

0.76 ±0.10

(5.34)

(1.50)

(2XR0.25)

(5.04)

0.89 ±0.10

(0.10) (3.05)

(1.00)

(0.90)

(0.70)

0.91

±0.10

2.30TYP

[2.30±0.20]

2.30TYP

[2.30±0.20]

MAX0.96

(4.34)(0.50) (0.50)

D-PAK

MJD29CTF

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Bipolar Transistors - BJT NPN Si Transistor Epitaxial

Lifecycle:

New from this manufacturer.

Delivery:

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Payment:

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Products related to this Datasheet

MJD29CTF