Characteristics T435T-600FP
2/9 DocID17632 Rev 3
1 Characteristics
Table 1. Absolute maximum ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (full sine wave) T
c
= 105 °C 4 A
I
TSM
Non repetitive surge peak on-state current (full
cycle sine wave, T
J
initial = 25 °C)
F = 60 Hz t = 16.7 ms 32
A
F = 50 Hz t = 20 ms 30
I
²
tI
²
t Value for fusing t
p
= 10 ms 6 A
²
s
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 120 Hz T
j
= 125 °C 50 A/µs
V
DSM
/V
RSM
Non repetitive surge peak off-state voltage t
p
= 10 ms T
j
= 25 °C
V
DRM
/V
RRM
+ 100
V
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 4 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
-40 to +150
-40 to +125
°C
Table 2. Electrical characteristics, Snubberless (3 quadrants)
(T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions Quadrant Value Unit
I
GT
(1)
V
D
= 12 V R
L
= 30 Ω I - II - III MAX 35 mA
V
GT
V
D
= 12 V R
L
= 30 Ω I - II - III MAX 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ I - II - III MIN 0.2 V
I
H
(2)
I
T
= 100 mA MAX 35 mA
I
L
I
G
= 1.2 x I
GT
I - III MAX 50
mA
II MAX 80
dV/dt
(2)
V
D
= 67% V
DRM
, gate open, T
j
= 125 °C MIN 750 V/µs
(dI/dt)c
(2)
Without snubber, T
j
= 125 °C MIN 5.3 A/ms
V
ins
Insulation rms voltage, 1 minute 2.0 kV
1. Minimum I
GT
is guaranteed at 5% of I
GT
max.
2. For both polarities of A2 pin referenced to A1 pin
