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VS-15ETH03SPBF

P1-P3P4-P6P7-P8
VS-15ETH03SPbF, VS-15ETH03-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 09-Jul-15
4
Document Number: 94001
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
Fig. 9 - Reverse Recovery Parameter Test Circuit
100
10
100 1000
t
rr
(ns)
dI
F
/dt (A/μs)
I
F
= 15 A, T
J
= 25 °C
I
F
= 15 A, T
J
= 125 °C
100
1000
10
100 1000
Q
rr
(nC)
dI
F
/dt (A/μs)
I
F
= 15 A, T
J
= 25 °C
I
F
= 15 A, T
J
= 125 °C
IRFP250
D.U.T.
L = 70 μH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
VS-15ETH03SPbF, VS-15ETH03-1PbF
www.vishay.com
Vishay Semiconductors
Revision: 09-Jul-15
5
Document Number: 94001
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - Reverse Recovery Waveform and Definitions
ORDERING INFORMATION TABLE
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve dened by t
rr
and I
RRM
t
rr
x I
RRM
2
Q
rr
=
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95014
Part marking information www.vishay.com/doc?95008
Packaging information www.vishay.com/doc?95032
2
- Current rating (15 A)
3
- E = single diode
4 - T = TO-220, D
2
PAK
5
- H = hyperfast rectifier
6
- Voltage rating (03 = 300 V)
- PbF = lead (Pb)-free
7
-
S = D
2
PAK
-1 = TO-262
8
-
None = tube (50 pieces)
TRL = tape and reel (left oriented, for D
2
PAK package)
TRR = tape and reel (right oriented, for D
2
PAK package)
9
Device code
51 32 4 6 7 8 9
VS- 15 E T H 03 S TRL PbF
1 - Vishay Semiconductors product
Document Number: 95014 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 31-Mar-09 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
D
2
PAK, TO-262
Outline Dimensions
Vishay Semiconductors
DIMENSIONS - D
2
PAK in millimeters and inches
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall
not exceed 0.127 mm (0.005") per side. These dimensions are
measured at the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Datum A and B to be determined at datum plane H
(6)
Controlling dimension: inch
(7)
Outline conforms to JEDEC outline TO-263AB
SYMBOL
MILLIMETERS INCHES
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 7.90 8.80 0.311 0.346 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
c
B
Detail A
c2
AA
A
± 0.004
B
M
A
Lead tip
(3)
(3)
View A - A
(E)
(D1)
E1
B
H
A1
Detail “A”
Rotated 90 °CW
Scale: 8:1
L
Gauge
plane
0° to 8°
L3
L4
Seating
plane
Section B - B and C - C
Scale: None
(4)
(4)
(b, b2)
b1, b3
(c)
c1
Base
Metal
Plating
Conforms to JEDEC outline D
2
PAK (SMD-220)
132
D
C
A
L2
E
(2)(3)
(2)
4
H
BB
2 x b
2 x b2
L1
0.010
A
B
MM
(3)
e
2 x
Pad layout
MIN.
11.00
(0.43)
MIN.
9.65
(0.38)
MIN.
3.81
(0.15)
MIN.
2.32
(0.08)
17.90 (0.70)
15.00 (0.625)
2.64 (0.103)
2.41 (0.096)
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
P1-P3P4-P6P7-P8

VS-15ETH03SPBF

Mfr. #:
Buy VS-15ETH03SPBF
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers RECOMMENDED ALT 78-VS-15ETH03S-M3
Lifecycle:
New from this manufacturer.
Delivery:
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