NPN SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 2 MARCH 1994
FEATURES
* 300 Volt V
CEO
* 0.5 Amp continuous current
*P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
300 V
Collector-Emitter Voltage V
CEO
300 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
1A
Continuous Collector Current I
C
500 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
300 V
I
C
=100µA, I
E
=0
Collector-Emitter
Breakdown Voltage
V
CEO(sus)
300 V I
C
=10mA, I
B
=0*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
5V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
100
10
nA
µA
V
CB
=200V
V
CB
=200V, T
amb
=100°C
Emitter Cut-Off Current I
EBO
100 nA V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.3 V I
C
=100mA, I
B
=10mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1VI
C
=100mA, I
B
=10mA*
Base-Emitter
Turn On Voltage
V
BE(on)
1 V IC=100mA, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
50
50
25
300
I
C
=10mA, V
CE
=10V*
I
C
=50mA, V
CE
=10V*
I
C
=100mA, V
CE
=10V*
Transition Frequency f
T
75 MHz I
C
=50mA, V
CE
=10V
f=20MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
E-Line
TO92 Compatible
3-181
ZTX457
C
B
E
