2
Thermal Resistance
[2]
: θ
ch-c
= 310°C/W
Notes:
1. Permanent damage may occur if any of
these limits are exceeded.
2. TC = 25°C (TC is dened to be the
temperature at the package pins where
contact is made to the circuit board).
IAM-91563 Electrical Specications, T
C
= 25°C, V
d
= 3 V
Symbol Parameters and Test Conditions Units Min. Typ. Max. Std Dev
[2]
G
test
Gain in test circuit
[1]
RF=1890 MHz, IF=250 MHz dB 4.0 9.0
NF
test
Noise Figure in test circuit
[1]
RF=1890 MHz, IF=250 MHz dB 8.5 11.0
I
d
Device Current mA 6.0 9.0 12.0
NF Noise Figure (RF & IF with external matching, f = 0.9 GHz dB 7.0
IF=250 MHz, LO power=-5 dBm) f = 1.9 GHz 8.5 0.5
f = 2.4 GHz 11.0
f = 4.0 GHz 16.5
f = 6.0 GHz 18.0
G
c
Conversion gain (RF and IF with external matching, f = 0.9 GHz dB 11.0
IF=250 MHz, LO power=-5 dBm) f = 1.9 GHz 9.0 1.5
f = 2.4 GHz 7.7
f = 4.0 GHz 4.6
f = 6.0 GHz 1.7
P
1 dB
Output power @ 1 dB compression (RF and IF with f = 0.9 GHz dBm -6.7
external matching, IF=250 MHz, LO power =-5 dBm) f = 1.9 GHz -8.0 1.3
f = 2.4 GHz -8.7
f = 4.0 GHz -15.0
f = 6.0 GHz -17.8
RL
RF
RF port return loss f = 0.5 - 6.0 GHz dB -1.7 0.2
RL
LO
LO port return loss f = 0.5 - 6.0 GHz dB -9.4 0.3
RL
IF
IF port return loss f = 50 - 700 MHz dB -3.7 0.2
IP
3
Input Third Order Intercept Point RF = 1.9 GHz, IF = 250 MHz dBm -6.0 1.3
I
d
= 9.0 mA, LO power = -5 dBm
IP
3
Input Third Order Intercept Point RF = 1.9 GHz, IF = 250 MHz dBm 0 1.1
I
d
= 15 mA, LO power = -2 dBm
ISOL
L-R
LO-RF Isolation RF = 1.9 GHz dB 18
ISOL
R-I
RF-IF Isolation (No Match) dB 2
ISOL
R-I
LO-IF Isolation (No Match) dB 4
Notes:
1. Guaranteed specications are 100% tested in the circuit in Figure 18 in the Applications Information section.
2. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characterization
of this product, and is intended to be used as an estimate for distribution of the typical specication.
IAM-91563 Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum
[1]
V
d
Device Voltage, RF output to ground V 6.0
V
RF,
V
LO
RF voltage or LO voltage to ground V +0.5, -1.0
P
in
CW RF Input Power dBm +13
T
ch
Channel Temperature °C 150
T
STG
Storage Temperature °C -65 to 150