BSC014N03MS G
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Power dissipation
P
tot
T
C
=25 °C
139 W
T
A
=25 °C,
R
thJA
=50 K/W
2)
2.5
Operating and storage temperature
T
j
, T
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
bottom - - 0.9 K/W
top - - 20
Device on PCB
R
thJA
6 cm
2
cooling area
2)
- - 50
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
=1 mA
30 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=250 µA
1 - 2
Zero gate voltage drain current
I
DSS
V
DS
=30 V, V
GS
=0 V,
T
j
=25 °C
- 0.1 1 µA
V
DS
=30 V, V
GS
=0 V,
T
j
=125 °C
- 10 100
Gate-source leakage current
I
GSS
V
GS
=16 V, V
DS
=0 V
- 10 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=4.5 V, I
D
=30 A
- 1.4 1.75
mΩ
V
GS
=10 V, I
D
=30 A
- 1.2 1.4
Gate resistance
R
G
0.7 1.5 2.6
Ω
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=30 A
70 140 - S
3)
See figure 3 for more detailed information
Value
Values
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.5 page 2 2009-10-22
