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NGD8205NT4

P1-P3P4-P6P7-P7
NGD8205N, NGD8205AN
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Self Clamped Inductive Switching Figure 2. Open Secondary Avalanche Current
vs. Temperature
Figure 3. Collector−to−Emitter Voltage vs.
Junction Temperature
Figure 4. Collector Current vs.
Collector−to−Emitter Voltage
Figure 5. Collector Current vs.
Collector−to−Emitter Voltage
Figure 6. Collector Current vs.
Collector−to−Emitter Voltage
INDUCTOR (mH)
250
068
4
100
50
200
0
400
150
10
T
J
= 25°C
SCIS ENERGY (mJ)
T
J
, JUNCTION TEMPERATURE (°C)
−50 50 75250 100−25
125
10
20
5
15
0
25
30
175
V
CC
= 14 V
V
GE
= 5.0 V
R
G
= 1000 W
L = 10 mH
150
L = 3.0 mH
L = 1.8 mH
I
A
, AVALANCHE CURRENT (A)
1.25
T
J
, JUNCTION TEMPERATURE (°C)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
−50 50 75250 100−25 125
0.5
1.5
0.25
1.0
0.0
1.75
2.0
0.75
150
V
GE
= 4.5 V
I
C
= 25 A
I
C
= 20 A
I
C
= 15 A
I
C
= 10 A
I
C
= 7.5 A
0
40
6
10
42
I
C,
COLLECTOR CURRENT (A)
0
60
20
30
50
81357
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= 175°C
V
GE
= 10 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
0
40
6
10
42
I
C,
COLLECTOR CURRENT (A)
0
60
20
30
50
81357
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= −40°C
V
GE
= 10 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
40
10
2
I
C,
COLLECTOR CURRENT (A)
0
60
20
30
50
81357
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
T
J
= 25°C
V
GE
= 10 V
5 V
4.5 V
4 V
3.5 V
3 V
2.5 V
064
V
CC
= 14 V
V
GE
= 5.0 V
R
G
= 1000 W
350
300
2
T
J
= 175°C
175
NGD8205N, NGD8205AN
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS
T
J
, JUNCTION TEMPERATURE (°C)
GATE THRESHOLD VOLTAGE (V)
−50 75 100250 125−25 175
Mean + 4 s
Mean − 4 s
Mean
V
GE
, GATE TO EMITTER VOLTAGE (V)
1.50
0.25
0
2.50
0.75
1.25
2.00
6
4
0
8
10
12
Figure 7. Transfer Characteristics Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
Figure 9. Gate Threshold Voltage vs.
Temperature
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
Figure 11. Resistive Switching Fall Time vs.
Temperature
Figure 12. Inductive Switching Fall Time vs.
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
SWITCHING TIME (ms)
T
J
= 175°C
50 7525 100 175150
t
fall
V
CC
= 300 V
V
GE
= 5.0 V
R
G
= 1000 W
I
C
= 9.0 A
L = 300 mH
1.5 3 3.52.5 420.5
20
10
40
0
30
0
V
CE
= 5 V
I
C
, COLLECTOR CURRENT (A)
50 150
0.50
1.00
1.75
2.25
2
125
t
delay
10000
1000
100
10
0.1
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
01552510 20
C
rss
C
iss
C
oss
1.0
6
4
0
8
10
12
T
J
, JUNCTION TEMPERATURE (°C)
SWITCHING TIME (ms)
7550 100 175150
t
fall
V
CC
= 300 V
V
GE
= 5.0 V
R
G
= 1000 W
I
C
= 9.0 A
R
L
= 33 W
2
25 125
t
delay
25
15
45
5
35
1
T
J
= −40°C
T
J
= 25°C
100000
1000
100
10
0.1
T
J
, JUNCTION TEMPERATURE (°C)
COLLECTOR TO EMITTER LEAKAGE
CURRENT (mA)
05025−25 125 17575 100 150
V
CE
= 175 V
1.0
−50
V
CE
= −24 V
10000
NGD8205N, NGD8205AN
http://onsemi.com
6
0.000001 0.0010.0001 0.1
100
1
0.01
0.01
t,TIME (S)
R(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
110100 1000
0.1
Figure 13. Minimum Pad Transient Thermal Resistance
(Non−normalized Junction−to−Ambient)
10
0.00001
0.2
Single Pulse
0.1
0.05
0.02
0.01
Duty Cycle = 0.5
Figure 14. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
A
= P
(pk)
R
q
JA
(t)
For D=1: R
q
JC
X R(t) for t ≤ 0.1 s
0.000001 0.0010.0001 0.1
1
0.01
0.01
t,TIME (S)
R
q
JC
(t), TRANSIENT THERMAL RESISTANCE (°C/Watt)
110
0.1
10
0.00001
0.2
Single Pulse
0.1
0.05
0.02
0.01
Duty Cycle = 0.5
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
A
= P
(pk)
R
q
JC
(t)
P1-P3P4-P6P7-P7

NGD8205NT4

Mfr. #:
Buy NGD8205NT4
Manufacturer:
ON Semiconductor
Description:
IGBT 390V 20A 125W DPAK
Lifecycle:
New from this manufacturer.
Delivery:
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