VS-47CTQ020STRL-M3

VS-47CTQ020S-M3, VS-47CTQ020-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 28-Feb-14
1
Document Number: 94943
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 2 x 20 A
FEATURES
150 °C T
J
operation
Center tap configuration
Optimized for 3.3 V application
Ultralow forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and
long term reliability
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Designed and qualified according to JEDEC
®
-JESD 47
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
This center tap Schottky rectifier module has been
optimized for ultralow forward voltage drop specifically for
3.3 V output power supplies. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are parallel
switching power supplies, converters, reverse battery
protection, and redundant power subsystems.
PRODUCT SUMMARY
I
F(AV)
2 x 20 A
V
R
20 V
V
F
at I
F
0.34 V
I
RM
max. 310 mA at 125 °C
T
J
max. 150 °C
E
AS
18 mJ
Package TO-263AB (D
2
PAK), TO-262AA
Diode variation Common cathode
D
2
PAK
TO-262
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
Base
common
cathode
Anode Anode
Common
cathode
1
3
2
2
VS-47CTQ020S-M3
VS-47CTQ020-1-M3
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 40 A
V
RRM
20 V
I
FSM
t
p
= 5 μs sine 1000 A
V
F
20 A
pk
, T
J
= 125 °C 0.34 V
T
J
-55 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS
VS-47CTQ020S-M3
VS-47CTQ020-1-M3
UNITS
Maximum DC reverse voltage V
R
125 °C 20
V
150 °C 10
VS-47CTQ020S-M3, VS-47CTQ020-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 28-Feb-14
2
Document Number: 94943
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
per leg
I
F(AV)
50 % duty cycle at T
C
= 135 °C, rectangular waveform
20
A
per device 40
Maximum peak one cycle
non-repetitive surge current per leg
I
FSM
5 μs sine or 3 μs rect. pulse Following any rated load
condition and with rated
V
RRM
applied
1000
10 ms sine or 6 ms rect. pulse 250
Non-repetitive avalanche energy per leg E
AS
T
J
= 25 °C, I
AS
= 3 A, L = 3 mH 18 mJ
Repetitive avalanche current per leg I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
3A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop per leg V
FM
(1)
20 A
T
J
= 25 °C
0.45
V
40 A 0.51
20 A
T
J
= 125 °C
0.34
40 A 0.44
20 A
T
J
= 150 °C
0.31
40 A 0.42
Maximum reverse leakage
current per leg
I
RM
(1)
T
J
= 125 °C
V
R
= 5 V 60
mA
V
R
= 3.3 V 45
T
J
= 150 °C V
R
= 10 V 306
T
J
= 25 °C
V
R
= Rated V
R
3
T
J
= 125 °C 310
Threshold voltage V
F(TO)
T
J
= T
J
maximum 0.188 V
Forward slope resistance r
t
5.9 m
Maximum junction capacitance per leg C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 3000 pF
Typical series inductance per leg L
S
Measured lead to lead 5 mm from package body 5.5 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
- 55 to 150 °C
Maximum thermal resistance,
junction to case per leg
R
thJC
DC operation
1.5
°C/W
Maximum thermal resistance,
junction to case per package
0.75
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf cm
(lbf in)
maximum 12 (10)
Marking device
Case style D
2
PAK 47CTQ020S
Case style TO-262 47CTQ020-1
VS-47CTQ020S-M3, VS-47CTQ020-1-M3
www.vishay.com
Vishay Semiconductors
Revision: 28-Feb-14
3
Document Number: 94943
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
1
100
10
1000
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.6 0.8 1.0
1.2 1.4
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.01
10
100
1
0.1
1000
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
48 1612 20
0
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
1000
10 000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
426810
14 16 18 20 22
12
0
T
J
= 25 °C
0.01
0.1
1
10
0.00001 0.0001
0.001 0.01
0.1 1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
10 100
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C

VS-47CTQ020STRL-M3

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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