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BD242C

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 10
1 Publication Order Number:
BD241C/D
BD241C (NPN),
BD242B (PNP),
BD242C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
• High Current Gain − Bandwidth Product
• Compact TO−220 AB Package
• Epoxy Meets UL94 V−0 @ 0.125 in
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol BD242B
BD241C
BD242C
Unit
Collector−Emitter Voltage V
CEO
80 100 Vdc
Collector−Emitter Voltage V
CES
90 115 Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current −Continuous I
C
3.0 Adc
Collector Current − Peak I
CM
5.0 Adc
Base Current I
B
1.0 Adc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
40
0.32
W
W/°C
Operating and Storage
Junction Temperature Range
T
J
, T
stg
–65 to +150 °C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
3.125 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
†
ORDERING INFORMATION
TO−220
CASE 221A
STYLE 1
3
1
POWER TRANSISTORS
COMPLEMENTARY
SILICON
3 AMP
80−100 VOLTS
40 WATTS
2
MARKING
DIAGRAM
BD24xx = Device Code
xx = 1C, 2B, or 2C
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
www.onsemi.com
AYWW
BD24xxG
BD241CG TO−220
(Pb−Free)
50 Units/Rail
BD242BG TO−220
(Pb−Free)
50 Units/Rail
BD242CG TO−220
(Pb−Free)
50 Units/Rail
4
1
BASE
EMITTER 3
COLLECTOR 2,4
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
BASE
EMITTER 3
COLLECTOR 2,4
COMPLEMENTARY
BD241C (NPN), BD242B (PNP), BD242C (PNP)
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 30 mAdc, I
B
= 0) BD242B
BD241C, BD242C
V
CEO
80
100
Vdc
Collector Cutoff Current
(V
CE
= 50 Vdc, I
B
= 0) BD242B
(V
CE
= 60 Vdc, I
B
= 0) BD241C, BD242C
I
CEO
0.3
mAdc
Collector Cutoff Current
(V
CE
= 80 Vdc, V
EB
= 0) BD242B
(V
CE
= 100 Vdc, V
EB
= 0) BD241C, BD242C
I
CES
200
mAdc
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
I
EBO
1.0
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(I
C
= 1.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
h
FE
25
10
Collector−Emitter Saturation Voltage
(I
C
= 3.0 Adc, I
B
= 0.6 Adc)
V
CE(sat)
1.2
Vdc
Base−Emitter On Voltage
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
V
BE(on)
1.8
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(I
C
= 500 mAdc, V
CE
= 10 Vdc, f
test
= 1.0 MHz)
f
T
3.0
MHz
Small−Signal Current Gain
(I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
fe
20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. f
T
= |h
fe
| • f
test
.
40
30
20
10
0
0 20 40 60 80 100 120 140 160
Figure 1. Power Derating
T
C
, CASE TEMPERATURE (°C)
P
D
, POWER DISSIPATION (WATTS)
BD241C (NPN), BD242B (PNP), BD242C (PNP)
www.onsemi.com
3
2.0
0.03
I
C
, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
1.0
0.7
0.5
0.3
0.1
0.07
0.02
0.05 0.1 0.3 0.5 0.7 1.0 3.0
t
d
@ V
BE(off)
= 2.0 V
I
C
/I
B
= 10
T
J
= 25°C
t
r
@ V
CC
= 30 V
t
r
@ V
CC
= 10 V
0.07
0.03
0.05
Figure 2. Switching Time Equivalent Circuit Figure 3. Turn−On Time
APPROX
+ 11 V
TURN‐ON PULSE
V
in
0
t
1
V
EB(off)
APPROX - 9.0 V
TURN‐OFF PULSE
V
in
t
3
t
2
APPROX
+ 11 V
V
CC
SCOPE
R
K
C
jd
%C
eb
- 4.0 V
t
1
v 7.0 ns
100 t t
2
t 500 ms
t
3
t 15 ns
DUTY CYCLE [ 2.0%
V
in
R
L
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
Z
q
JC
(t) = r(t) R
q
JC
R
q
JC
= 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
SECOND BREAKDOWN
LIMITED @ T
J
v 150°C
THERMAL LIMITATION @ T
C
= 25°C
BONDING WIRE LIMITED
CURVES APPLY BELOW
RATED V
CEO
10
5.0
Figure 5. Active Region Safe Operating Area
I
C
, COLLECTOR CURRENT (AMP)
5.0
1.0
0.1
10 20 50 100
BD241C, BD242C
5.0 ms
100 ms
1.0 ms
0.2
2.0
0.5
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
J(pk)
≤ 150°C, T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
P1-P3P4-P6

BD242C

Mfr. #:
Buy BD242C
Manufacturer:
Bourns
Description:
Bipolar Transistors - BJT 40W PNP Silicon
Lifecycle:
New from this manufacturer.
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