STN851-A

P1-P3 P4-P6 P7-P9 P10-P10

March 2009 Rev 1 1/10

10

STN851-A

Low voltage fast-switching NPN power transistor

Features

■ AEC Q101 compliant

■ Very low collector to emitter saturation voltage

■ High current gain characteristic

■ Fast-switching speed

■ Surface-mounting SOT-223 power package in

tape and reel

Applications

■ High efficiency low voltage switching

applications

Description

The device is manufactured in planar technology

with "Base Island" layout.

The resulting transistor shows exceptional high

gain performance coupled with very low

saturation voltage.

Figure 1. Internal schematic diagram

SOT-223

1

2

4

3

Table 1. Device summary

Order code Marking Package Packaging

STN851-A N851 SOT-223 Tape and reel

www.st.com

Electrical ratings STN851-A

2/10

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

V

CBO

Collector-base voltage (I

E

= 0) 150 V

V

CEO

Collector-emitter voltage (I

B

= 0) 60 V

V

EBO

Emitter-base voltage (I

C

= 0)

7

V

I

C

Collector current 5 A

I

CM

Collector peak current (t

P

< 5 ms) 10 A

I

B

Base current 1 A

I

BM

Base peak current (t

P

< 5 ms) 2 A

P

tot

Total dissipation at T

amb

= 25 °C 1.6 W

T

stg

Storage temperature -65 to 150 °C

T

J

Max. operating junction temperature 150 °C

Table 3. Thermal data

Symbol Parameter Value Unit

R

thj-amb

Thermal resistance junction-ambient

(1)

1. Device mounted on a p.c.b. area of 1 cm

2

78 °C/W

STN851-A Electrical characteristics

3/10

2 Electrical characteristics

(T

case

= 25 °C unless otherwise specified)

Table 4. Electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

CBO

Collector cut-off current

(I

E

= 0)

V

CB

= 120 V

V

CB

= 120 V T

c

= 100

o

C

50

1

nA

µA

I

EBO

Emitter cut-off current

(I

C

= 0)

V

EB

= 7 V 10 nA

V

(BR)CBO

Collector-base

breakdown voltage

(I

E

= 0)

I

C

= 100 µA

150 V

V

(BR)CEO

(1)

1. Pulse duration = 300 µs, duty cycle ≤ 1.5%

Collector-emitter

breakdown voltage

(I

B

= 0)

I

C

= 10 mA

60 V

V

(BR)EBO

Emitter-base breakdown

voltage (I

C

= 0)

I

E

= 100 µA

7 V

V

CE(sat)

(1)

Collector-emitter

saturation voltage

I

C

= 100 mA I

B

= 5 mA

I

C

= 1 A_ _ I

B

= 50 mA

I

C

= 2 A I

B

= 50 mA

I

C

= 5 A_ _ I

B

= 200 mA

10

70

140

320

50

120

250

500

mV

mV

mV

mV

V

BE(sat)

(1)

Base-emitter saturation

voltage

I

C

= 4 A_ _ I

B

= 200 mA 1 1.15 V

V

BE(on)

(1)

Base-emitter on voltage I

C

= 4 A_ _ V

CE

= 1 V 0.89 1 V

h

FE

(1)

DC current gain

I

C

= 10 mA V

CE

= 1 V

I

C

= 2 A_ _ V

CE

= 1 V

I

C

= 5 A V

CE

= 1 V

I

C

= 10 A _ V

CE

= 1 V

150

150

90

30

300

270

140

50

350

f

T

Transition frequency V

CE

= 10 V I

C

= 100 mA 130 MHz

C

CBO

Collector-base

capacitance (I

E

= 0)

V

CB

= 10 V f = 1 MHz 50 pF

t

on

t

s

t

f

Resistive load

Turn-on time

Storage time

Fall time

I

C

= 1 A V

CC

= 10 V

I

B1

= -I

B2

= 0.1 A

50

1.35

120

ns

µs

ns

P1-P3 P4-P6 P7-P9 P10-P10

STN851-A

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Bipolar Transistors - BJT Low voltage NPN Power Transistor

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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Products related to this Datasheet

STN851-A