SI1303DL-T1-GE3

Vishay Siliconix
Si1303DL
Document Number: 71075
S10-0110-Rev. F, 18-Jan-10
www.vishay.com
1
P-Channel 2.5-V (G-S) MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
•TrenchFET
®
Power MOSFETs
2.5 V Rated
Compliant to RoHS Directive 2002/95/EC
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 20
0.430 at V
GS
= - 4.5 V - 0.72
0.480 at V
GS
= - 3.6 V - 0.68
0.700 at V
GS
= - 2.5 V - 0.56
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 5 s Steady State Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 0.72 - 0.67
A
T
A
= 70 °C - 0.58 - 0.54
Pulsed Drain Current
I
DM
- 2.5
Continuous Diode Current (Diode Conduction)
a
I
S
- 0.28 - 0.24
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
0.34 0.29
W
T
A
= 70 °C 0.22 0.19
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t 5 s
R
thJA
315 375
°C/WSteady State 360 430
Maximum Junction-to-Foot (Drain)
Steady State
R
thJF
285 340
SO
T-323
SC-70 (3-LEADS)
1
2
3
Top View
G
S
D
Marking Code
LA X
Lot Traceability
and Date Code
Part # Code
Y Y
Ordering Information: Si1303DL-T1-E3 (Lead (Pb)-free)
Si1303DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
www.vishay.com
2
Document Number: 71075
S10-0110-Rev. F, 18-Jan-10
Vishay Siliconix
Si1303DL
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS,
I
D
= - 250 µA
-0.6 - 1.4 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 12 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 20 V, V
GS
= 0 V
- 1
µA
V
DS
= - 20 V, V
GS
= 0 V, T
J
= 70 °C
- 5
On-State Drain Current
a
I
D(on)
V
DS
= - 5 V, V
GS
= - 4.5 V
- 2.5 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 1 A
0.360 0.430
Ω
V
GS
= - 3.6 V, I
D
= - 0.7 A
0.400 0.480
V
GS
= - 2.5 V, I
D
= - 0.3 A
0.560 0.700
Forward Transconductance
a
g
fs
V
GS
= - 10 V, I
D
= - 1 A
1.7 S
Diode Forward Voltage
a
V
SD
I
S
= - 0.3 A, V
GS
= 0 V
- 1.2 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 1 A
1.7 2.2
nCGate-Source Charge
Q
gs
0.38
Gate-Drain Charge
Q
gd
0.63
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 10 Ω
I
D
- 1 A, V
GEN
= - 4.5 V, R
g
= 6 Ω
915
ns
Rise Time
t
r
31 45
Turn-Off DelayTime
t
d(off)
12.5 20
Fall Time
t
f
14 20
Source-Drain Reverse Recovery Time
t
rr
I
F
= - 1 A, dI/dt = 100 A/µs
35 55
Output Characteristics
0
1
2
3
4
5
6
02468
V
GS
= 4.5 V
2 V
V
DS
- Drain-to-Source Voltage (V)
)
A( t
n
e
rr
uC
ni
ar
D
-I
D
1 V, 1.5 V
2.5 V
3 V
3.5 V
4 V
Transfer Characteristics
0
1
2
3
4
5
6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
T
C
= - 55 °C
125 °C
25°C
V
GS
- Gate-to-Source Voltage (V)
)
A
(
tn
e
r
r
u
C
n
i
a
r
D
-
I
D
Document Number: 71075
S10-0110-Rev. F, 18-Jan-10
www.vishay.com
3
Vishay Siliconix
Si1303DL
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
(Ω) ecnatsiseR-nO -R
DS(on)
0.0
0.4
0.8
1.2
1.6
2.0
0123456
I
D
- Drain Current (A)
V
GS
= 3.6 V
V
GS
= 2.5 V
V
GS
= 4.5 V
0
3
6
9
12
01234
V
DS
= 10 V
I
D
= 1 A
)V( egatloV ecruo
S
-
o
t
-
e
t
aG
-
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.3 0.6 0.9 1.2 1.5
10
1
0.001
V
SD
- Source-to-Drain Voltage (V)
)
A
(
t n e
r
r
u C
e
c
r u o
S
-I
S
0.1
0.01
T
J
= 150 °C
T
J
= 25 °C
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
0
50
100
150
200
250
048 12 16 20
V
DS
- Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
)Fp( ecnaticapaC - C
0.0
0.4
0.8
1.2
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 1 A
T
J
- Junction Temperature (°C)
)dezilamroN(
ecnatsiseR
-
nO
-
R
DS(on)
0.0
0.5
1.0
1.5
2.0
2.5
0123456
I
D
= 1 A
(Ω)
e
c n a
t
s i
s e R
- n O
-
R
DS(on)
GS
- Gate-to-Source Voltage (V)
V

SI1303DL-T1-GE3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
MOSFET RECOMMENDED ALT 78-SI1403CDL-T1-GE3
Lifecycle:
New from this manufacturer.
Delivery:
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