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BFU520YF

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
1. Product profile
1.1 General description
Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin
SOT363 package.
The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
1.2 Features and benefits
Low noise, high breakdown RF transistor
AEC-Q101 qualified
Minimum noise figure (NF
min
) = 0.65 dB at 900 MHz
Maximum stable gain 19 dB at 900 MHz
11 GHz f
T
silicon technology
1.3 Applications
Applications requiring high supply voltages and high breakdown voltages
Broadband differential amplifiers up to 2 GHz
Low noise amplifiers for ISM applications
ISM band oscillators
1.4 Quick reference data
BFU520Y
Dual NPN wideband silicon RF transistor
Rev. 1 — 20 February 2014 Product data sheet
Table 1. Quick reference data
T
amb
=25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V
CB
collector-base voltage open emitter - - 24 V
V
CE
collector-emitter voltage open base - - 12 V
shorted base - - 24 V
V
EB
emitter-base voltage open collector - - 2 V
I
C
collector current - 5 30 mA
P
tot
total power dissipation T
sp
87 C
[1]
-- 450mW
h
FE
DC current gain I
C
=5mA; V
CE
=8V 60 95 200
C
c
collector capacitance V
CB
=8V; f=1MHz - 0.48 - pF
f
T
transition frequency I
C
=10mA; V
CE
= 8 V; f = 900 MHz - 10 - GHz
BFU520Y All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 20 February 2014 2 of 20
NXP Semiconductors
BFU520Y
Dual NPN wideband silicon RF transistor
[1] T
sp
is the temperature at the solder point of the collector lead.
[2] If K > 1 then G
p(max)
is the maximum power gain. If K 1 then G
p(max)
=MSG.
2. Pinning information
3. Ordering information
4. Marking
G
p(max)
maximum power gain I
C
=5mA; V
CE
= 8 V; f = 900 MHz
[2]
-19- dB
NF
min
minimum noise figure I
C
=1mA; V
CE
= 8 V; f = 900 MHz;
S
=
opt
-0.65- dB
P
L(1dB)
output power at 1 dB gain
compression
I
C
=10mA; V
CE
=8V; Z
S
=Z
L
=50;
f=900MHz
-7.0- dBm
Table 1. Quick reference data
…continued
T
amb
=25
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Table 2. Discrete pinning
Pin Description Simplified outline Graphic symbol
1 base1
2emitter1
3 collector2
4 base2
5emitter2
6 collector1

DDD
Table 3. Ordering information
Type number Package
Name Description Version
BFU520Y - plastic surface-mounted package; 6 leads SOT363
Table 4. Marking
Type number Marking Description
BFU520Y WB* * = t : made in Malaysia
* = w : made in China
BFU520Y All information provided in this document is subject to legal disclaimers. © NXP B.V. 2014. All rights reserved.
Product data sheet Rev. 1 — 20 February 2014 3 of 20
NXP Semiconductors
BFU520Y
Dual NPN wideband silicon RF transistor
5. Design support
6. Limiting values
7. Recommended operating conditions
[1] T
sp
is the temperature at the solder point of the collector lead.
Table 5. Available design support
Download from the BFU520Y product information page on http://www.nxp.com.
Support item Available Remarks
Device models for Agilent EEsof EDA ADS yes Based on Mextram device model.
SPICE model yes Based on Gummel-Poon device
model.
S-parameters yes
Noise parameters yes
Solder pattern yes
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CB
collector-base voltage open emitter - 30 V
V
CE
collector-emitter voltage open base - 16 V
shorted base - 30 V
V
EB
emitter-base voltage open collector - 3 V
I
C
collector current -50mA
T
stg
storage temperature 65 +150 C
V
ESD
electrostatic discharge voltage Human Body Model (HBM) According to JEDEC
standard 22-A114E
- 150 V
Charged Device Model (CDM) According to
JEDEC standard 22-C101B
- 2kV
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
CB
collector-base voltage open emitter - - 24 V
V
CE
collector-emitter voltage open base - - 12 V
shorted base - - 24 V
V
EB
emitter-base voltage open collector - - 2 V
I
C
collector current - - 30 mA
P
i
input power Z
S
= 50 --10dBm
T
j
junction temperature 40 - +150 C
P
tot
total power dissipation T
sp
87 C
[1]
--450mW
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

BFU520YF

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Buy BFU520YF
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors Dual NPN wideband si silicon RF trans
Lifecycle:
New from this manufacturer.
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