SIDC06D60E6X1SA3

Preliminary
SIDC06D60E6
Edited by INFINEON Technologies AI PS DD HV3, L 4343M, Edition 1, 3.12.01
Fast switching diode chip in EMCON-Technology
This chip is used for:
EUPEC power modules and
discrete devices
FEATURES:
600V EMCON technology 70 µm chip
soft, fast switching
low reverse recovery charge
small temperature coefficient
Applications:
SMPS, resonant applications,
drives
A
C
Chip Type V
R
I
F
Die Size Package Ordering Code
SIDC06D60E6
600V 10A 2.45 x 2.45 mm
2
sawn on foil
Q67050-A4166-
A001
MECHANICAL PARAMETER:
Raster size 2.45 x 2.45
Area total / active 6 / 3.53
Anode pad size 1.73 x 1.73
mm
2
Thickness 70 µm
Wafer size 150 mm
Flat position 180 deg
Max. possible chips per wafer 2520 pcs
Passivation frontside Photoimide
Anode metallisation 3200 nm AlSiCu
Cathode metallisation
1400 nm Ni Ag system
suitable for epoxy and soft solder die bonding
Die bond electrically conductive glue or solder
Wire bond Al, 500µm
Reject Ink Dot Size 0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Preliminary
SIDC06D60E6
Edited by INFINEON Technologies AI PS DD HV3, L 4343M, Edition 1, 3.12.01
Maximum Ratings
Parameter Symbol Condition Value Unit
Repetitive peak reverse voltage V
RRM
600 V
Continuous forward current limited by
T
jmax
I
F
10
Single pulse forward current
(depending on wire bond configuration)
I
FSM
t
P
= 10 ms sinusoidal tbd
Maximum repetitive forward current
limited by T
jmax
I
FRM
30
A
Operating junction and storage
temperature
T
j
, T
stg
-55...+150
°C
Static Electrical Characteristics (tested on chip), T
j
=25 °C, unless otherwise specified
Value
Parameter Symbol
Conditions
min. Typ. max.
Unit
Reverse leakage current I
R
V
R
=600V
T
j
=25°C
27 µA
Cathode-Anode
breakdown Voltage
V
Br
I
R
=1mA T
j
=25°C 600
V
Forward voltage drop
V
F
I
F
=10A
T
j
=25°C
1.25
V
Dynamic Electrical Characteristics, at T
j
= 25 °C, unless otherwise specified, tested at component
Value
Parameter Symbol
Conditions
min. Typ. max.
Unit
t
rr1
I
F
=10A
T
j
=25°C tbd Reverse recovery time
t
rr2
di/dt=300A/µs
V
R
=300V
T
j
=125°C
ns
I
RRM1
T
j
=25°C
8
Peak recovery current
I
RRM2
I
F
=10A
di/dt=300A/µs
V
R
= 300V T
j
=125°C
11
A
Q
rr1
T
j
=25°C
1.07
Reverse recovery charge
Q
rr2
I
F
=10A
di/dt=300A/µs
V
R
= 300V T
j
=125°C
1.7
µC
di
rr1
/dt
T
j
=25°C
tbd Peak rate of fall of reverse
recovery current
di
rr2
/dt
I
F
=10A
di/dt=300A/µs
V
R
= 300V
T
j
=125°C
A/µs
S1
T
j
=25°C
tbd Softness
S2
I
F
=10A
di/dt=300A/µs
V
R
= 300V T
j
=125°C
1
Preliminary
SIDC06D60E6
Edited by INFINEON Technologies AI PS DD HV3, L 4343M, Edition 1, 3.12.01
CHIP DRAWING:

SIDC06D60E6X1SA3

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
DIODE GEN PURP 600V 10A WAFER
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet