SI4800BDY-T1-E3 Datasheet SI4800BDY-T1-E3, SI4800BDY-T1-GE3 | P1-P3

Vishay Siliconix

Si4800BDY

Document Number: 72124

S-83039-Rev. H, 29-Dec-08

www.vishay.com

1

N-Channel Reduced Q

g

, Fast Switching MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

®

Power MOSFET

• High-Efficient PWM Optimized

• 100 % UIS and R

g

Tested

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

30

0.0185 at V

GS

= 10 V

9

0.030 at V

GS

= 4.5 V

7

S

D

S

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4800BDY-T1-E3 (Lead (Pb)-free)

Si4800BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

G

D

S

Notes:

a. Surface Mounted on FR4 board.

b. t ≤ 10 s.

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit

Drain-Source Voltage

V

DS

30

V

Gate-Source Voltage

V

GS

± 25

Continuous Drain Current (T

J

= 150 °C)

a, b

T

A

= 25 °C

I

D

96.5

A

T

A

= 70 °C

7.0 5.0

Pulsed Drain Current (10 µs Pulse Width)

I

DM

40

Continuous Source Current (Diode Conduction)

a, b

I

S

2.3

Avalanche Current

L = 0.1 mH

I

AS

15

Single-Pulse Avalanche Energy

E

AS

11.25 mJ

Maximum Power Dissipation

a, b

T

A

= 25 °C

P

D

2.5 1.3

W

T

A

= 70 °C

1.6 0.8

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol

Limits

Unit Typ. Max.

Maximum Junction-to-Ambient

a

t ≤ 10 s

R

thJA

40 50

°C/W

Steady State 70 95

Maximum Junction-to-Foot (Drain) Steady State

R

thJF

24 30

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Document Number: 72124

S-83039-Rev. H, 29-Dec-08

Vishay Siliconix

Si4800BDY

Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

MOSFET SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit

Static

Gate Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= 250 µA

0.8 1.8 V

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 20 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= 30 V, V

GS

= 0 V

1

µA

V

DS

= 30 V, V

GS

= 0 V, T

J

= 55 °C

5

On-State Drain Current

a

I

D(on)

V

DS

≥ 5 V, V

GS

= 10 V

30 A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V, I

D

= 9 A

0.0155 0.0185

Ω

V

GS

= 4.5 V, I

D

= 7 A

0.023 0.030

Forward Transconductance

a

g

fs

V

DS

= 15 V, I

D

= 9 A

16 S

Diode Forward Voltage

a

V

SD

I

S

= 2.3 A, V

GS

= 0 V

0.75 1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= 15 V, V

GS

= 5.0 V, I

D

= 9 A

8.7 13

nCGate-Source Charge

Q

gs

1.5

Gate-Drain Charge

Q

gd

3.5

Gate Resistance

R

g

0.5 1.4 2.2 Ω

Tur n - O n D e l ay Time

t

d(on)

V

DD

= 15 V, R

L

= 15 Ω

I

D

≅ 1 A, V

GEN

= 10 V, R

g

= 6 Ω

715

ns

Rise Time

t

r

12 20

Turn-Off Delay Time

t

d(off)

32 50

Fall Time

t

f

14 25

Source-Drain Reverse Recovery Time

t

rr

I

F

= 2.3 A, dI/dt = 100 A/µs

30 60

Document Number: 72124

S-83039-Rev. H, 29-Dec-08

www.vishay.com

3

Vishay Siliconix

Si4800BDY

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

5

10

15

20

25

30

35

40

012345

V

GS

= 10 thru 5 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

3 V

4 V

- On-Resistance (Ω)R

DS(on)

0.000

0.008

0.016

0.024

0.032

0.040

0 5 10 15 20 25 30

I

D

- Drain Current (A)

V

GS

= 10 V

V

GS

= 4.5 V

0

1

2

3

4

5

6

0246810

V

DS

= 15 V

I

D

= 9 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

5

10

15

20

25

30

35

40

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

T

C

= - 55 °C

125 °C

25 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

0

200

400

600

800

1000

1200

048121620

V

DS

- Drain-to-Source Voltage (V)

C

rss

C - Capacitance (pF)

C

oss

C

iss

0.6

0.8

1.0

1.2

1.4

1.6

1.8

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 10 V

I

D

= 9 A

T

J

- Junction Temperature (°C)

R

DS(on)

- On-Resistance

(Normalized)

SI4800BDY-T1-E3

SI4800BDY-T1-E3

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