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M74HC51B1R

P1-P3P4-P6P7-P9
1/9August 2001
■ HIGH SPEED:
t
PD
= 11ns (TYP.) at V
CC
= 6V
■ LOW POWER DISSIPATION:
I
CC
= 1µA(MAX.) at T
A
=25°C
■ HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 4mA (MIN)
■ BALANCED PROPAGATION DELAYS:
t
PLH
≅ t
PHL
■ WIDE OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
■ PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 51
DESCRIPTION
The M74HC51 is an high speed CMOS DUAL 2
WIDE 2 INPUT AND/OR INVERT GATE
fabricated with silicon gate C
2
MOS technology.
It contains a 2-WIDE 2-INPUT AND/OR INVERT
GATE and a 2-WIDE 3-INPUT AND/OR
INVERT GATE.
The internal circuit is composed of 3 stages (2
INPUT) or 5 stages (3 INPUT) including buffer
output, which enables high noise immunity and
stable output.
All inputs are equipped with protection circuits
against static discharge and transient excess
voltage.
M74HC51
DUAL 2 WIDE 2 INPUT AND/OR INVERT GATE
PIN CONNECTION AND IEC LOGIC SYMBOLS
ORDER CODES
PACKAGE TUBE T & R
DIP M74HC51B1R
SOP M74HC51M1R M74HC51RM13TR
TSSOP M74HC51TTR
TSSOPDIP SOP
Obsolete Product(s) - Obsolete Product(s)
M74HC51
2/9
INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
TRUTH TABLE
TRUTH TABLE
X : Don’t Care
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
(*) 500mW at 65
°C
; derate to 300mW by 10mW/
°C
from 65
°C to 85°C
PIN No SYMBOL NAME AND FUNCTION
1, 12, 13, 9,
10, 11
1A to 1F Data Inputs
2, 3, 4, 5 2A to 2D Data Inputs
8, 6 1Y to 2Y Data Outputs
7 GND Ground (0V)
14
V
CC
Positive Supply Voltage
1A 1B 1C 1D 1E 1F 1Y
HHHXXXL
XXXHHHL
ALL OTHER COMBINATIONS H
2A 2B 2C 2D 2Y
HHXXL
XXHHL
ALL OTHER COMBINATIONS H
Symbol Parameter Value Unit
V
CC
Supply Voltage
-0.5 to +7 V
V
I
DC Input Voltage -0.5 to V
CC
+ 0.5
V
V
O
DC Output Voltage -0.5 to V
CC
+ 0.5
V
I
IK
DC Input Diode Current
± 20 mA
I
OK
DC Output Diode Current
± 20 mA
I
O
DC Output Current
± 25 mA
I
CC
or I
GND
DC V
CC
or Ground Current
± 50 mA
P
D
Power Dissipation
500(*) mW
T
stg
Storage Temperature
-65 to +150 °C
T
L
Lead Temperature (10 sec)
300 °C
Obsolete Product(s) - Obsolete Product(s)
M74HC51
3/9
RECOMMENDED OPERATING CONDITIONS
DC SPECIFICATIONS
Symbol Parameter Value Unit
V
CC
Supply Voltage
2 to 6 V
V
I
Input Voltage 0 to V
CC
V
V
O
Output Voltage 0 to V
CC
V
T
op
Operating Temperature
-55 to 125 °C
t
r
, t
f
Input Rise and Fall Time V
CC
= 2.0V
0 to 1000 ns
V
CC
= 4.5V
0 to 500 ns
V
CC
= 6.0V
0 to 400 ns
Symbol Parameter
Test Condition Value
Unit
V
CC
(V)
T
A
= 25°C
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
V
IH
High Level Input
Voltage
2.0 1.5 1.5 1.5
V4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
V
IL
Low Level Input
Voltage
2.0 0.5 0.5 0.5
V4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
V
OH
High Level Output
Voltage
2.0
I
O
=-20 µA
1.9 2.0 1.9 1.9
V
4.5
I
O
=-20 µA
4.4 4.5 4.4 4.4
6.0
I
O
=-20 µA
5.9 6.0 5.9 5.9
4.5
I
O
=-4.0 mA
4.18 4.31 4.13 4.10
6.0
I
O
=-5.2 mA
5.68 5.8 5.63 5.60
V
OL
Low Level Output
Voltage
2.0
I
O
=20 µA
0.0 0.1 0.1 0.1
V
4.5
I
O
=20 µA
0.0 0.1 0.1 0.1
6.0
I
O
=20 µA
0.0 0.1 0.1 0.1
4.5
I
O
=4.0 mA
0.17 0.26 0.33 0.40
6.0
I
O
=5.2 mA
0.18 0.26 0.33 0.40
I
I
Input Leakage
Current
6.0
V
I
= V
CC
or GND
± 0.1 ± 1 ± 1 µA
I
CC
Quiescent Supply
Current
6.0
V
I
= V
CC
or GND
11020µA
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9

M74HC51B1R

Mfr. #:
Buy M74HC51B1R
Manufacturer:
STMicroelectronics
Description:
Logic Gates Dual AND/OR Gate
Lifecycle:
New from this manufacturer.
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