IRFR540ZTRPBF Datasheet IRFR540ZTRPBF, IRFR540ZTRLPBF, IRFR540ZTRRPBF | P1-P3

09/30/10

www.irf.com 1

HEXFET

®

is a registered trademark of International Rectifier.

HEXFET

®

Power MOSFET

V

DSS

= 100V

R

DS(on)

= 28.5mΩ

I

D

= 35A

This HEXFET

®

Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistance per silicon area. Additional features

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitive avalanche rating. These features

combine to make this design an extremely efficient

and reliable device for use in a wide variety of

applications.

S

D

G

Description

l Advanced Process Technology

l Ultra Low On-Resistance

l 175°C Operating Temperature

l Fast Switching

l Repetitive Avalanche Allowed up to Tjmax

l Lead-Free

l Halogen-Free

Features

IRFR540ZPbF

IRFU540ZPbF

D-Pak

IRFR540ZPbF

I-Pak

IRFU540ZPbF

Absolute Maximum Ratings

Parameter Units

I

D

@ T

C

= 25°C

Continuous Drain Current, V

GS

@ 10V (Silicon Limited)

I

D

@ T

C

= 100°C

Continuous Drain Current, V

GS

@ 10V (Silicon Limited)

A

I

DM

Pulsed Drain Current

P

D

@T

C

= 25°C Power Dissipation W

Linear Derating Factor W/°C

V

GS

Gate-to-Source Voltage V

E

AS (Thermally limited)

Single Pulse Avalanche Energy

mJ

E

AS

(Tested )

Single Pulse Avalanche Energy Tested Value

I

AR

Avalanche Current

A

E

AR

Repetitive Avalanche Energy

mJ

T

J

Operating Junction and

T

STG

Storage Temperature Range °C

Reflow Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

R

θJC

Junction-to-Case

––– 1.64

R

θJA

Junction-to-Ambient (PCB mount)

––– 40 °C/W

R

θJA

Junction-to-Ambient

––– 110

-55 to + 175

300

10 lbf

in (1.1N m)

91

0.61

± 20

Max.

35

25

140

75

39

See Fig.12a, 12b, 15, 16

PD - 96141B

IRFR/U540ZPbF

2 www.irf.com

S

D

G

Electr

i

cal

C

haracter

i

st

i

cs

@

T

J

= 25°

C

(

unless otherw

i

se spec

ifi

ed

)

Parameter Min. Typ. Max. Units

V

(BR)DSS

Drain-to-Source Breakdown Voltage 100 ––– ––– V

∆

V

(BR)DSS

/

∆

T

J

Breakdown Voltage Temp. Coefficient ––– 0.092 ––– V/°C

R

DS(on)

Static Drain-to-Source On-Resistance ––– 22.5 28.5

mΩ

V

GS(th)

Gate Threshold Voltage 2.0 ––– 4.0 V

gfs Forward Transconductance 28 ––– ––– S

I

DSS

Drain-to-Source Leakage Current ––– ––– 20 µA

––– ––– 250

I

GSS

Gate-to-Source Forward Leakage ––– ––– 200 nA

Gate-to-Source Reverse Leakage ––– ––– -200

Q

g

Total Gate Charge ––– 39 59

Q

gs

Gate-to-Source Charge ––– 11 ––– nC

Q

gd

Gate-to-Drain ("Miller") Charge ––– 12 –––

t

d(on)

Turn-On Delay Time ––– 14 –––

t

r

Rise Time ––– 42 –––

t

d(off)

Turn-Off Delay Time ––– 43 ––– ns

t

f

Fall Time ––– 34 –––

L

D

Internal Drain Inductance ––– 4.5 ––– Between lead,

nH 6mm (0.25in.)

L

S

Internal Source Inductance ––– 7.5 ––– from package

and center of die contact

C

iss

Input Capacitance ––– 1690 –––

C

oss

Output Capacitance ––– 180 –––

C

rss

Reverse Transfer Capacitance ––– 100 ––– pF

C

oss

Output Capacitance ––– 720 –––

C

oss

Output Capacitance ––– 110 –––

C

oss

eff. Effective Output Capacitance ––– 190 –––

Source-Drain Ratin

g

s and Characteristics

Parameter Min. Typ. Max. Units

I

S

Continuous Source Current ––– ––– 35

(Body Diode) A

I

SM

Pulsed Source Current ––– ––– 140

(Body Diode)

V

SD

Diode Forward Voltage ––– ––– 1.3 V

t

rr

Reverse Recovery Time ––– 32 48 ns

Q

rr

Reverse Recovery Charge ––– 40 60 nC

t

on

Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

V

GS

= 10V

V

DD

= 50V

I

D

= 21A

R

G

= 13 Ω

T

J

= 25°C, I

S

= 21A, V

GS

= 0V

T

J

= 25°C, I

F

= 21A, V

DD

= 50V

di/dt = 100A/µs

Conditions

V

GS

= 0V, I

D

= 250µA

Reference to 25°C, I

D

= 1mA

V

GS

= 10V, I

D

= 21A

V

DS

= V

GS

, I

D

= 50µA

V

DS

= 100V, V

GS

= 0V

V

DS

= 100V, V

GS

= 0V, T

J

= 125°C

MOSFET symbol

showing the

integral reverse

p-n junction diode.

Conditions

V

GS

= 10V

V

GS

= 0V

V

DS

= 25V

ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 1.0V, ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 80V, ƒ = 1.0MHz

V

GS

= 0V, V

DS

= 0V to 80V

V

GS

= 20V

V

GS

= -20V

V

DS

= 50V

V

DS

= 25V, I

D

= 21A

I

D

= 21A

IRFR/U540ZPbF

www.irf.com 3

Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Typical Forward Transconductance

vs. Drain Current

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

≤

60µs PULSE WIDTH

Tj = 25°C

4.5V

2 3 4 5 6 7 8

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

Α

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 25V

≤

60µs PULSE WIDTH

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

≤

60µs PULSE WIDTH

Tj = 175°C

4.5V

0 1020304050

I

D

,Drain-to-Source Current (A)

0

10

20

30

40

50

60

70

G

f

s

,

F

o

r

w

a

r

d

T

r

a

n

s

c

o

n

d

u

c

t

a

n

c

e

(

S

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 10V

380µs PULSE WIDTH

IRFR540ZTRPBF

IRFR540ZTRPBF

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