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IRFR540ZPBF
P1-P3
P4-P6
P7-P9
P10-P11
IRFR/U540ZPbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rain-
to-S
ource Vol
tage (V
)
0
500
1000
1500
2000
2500
3000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0
1
02
03
04
05
06
0
Q
G
Tot
al Gat
e Charge (
nC)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 80V
VDS= 50
V
VDS= 20
V
I
D
= 21A
0.2
0.4
0.6
0.8
1.
0
1.2
1.4
V
SD
, S
ource-t
o-Drai
n Vol
tage (V
)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
0
1
10
100
1000
V
DS
, D
rain-
toSour
ce Volt
age (V)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc =
25°C
Tj
= 175°
C
Si
ngle P
ulse
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
DC
IRFR/U540ZPbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
25
50
75
100
125
150
175
T
C
, C
aseTemperat
ure (°
C)
0
10
20
30
40
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1E-006
1E-
005
0.0001
0.001
0.01
0.1
t
1
, R
ectangular
Pulse D
urati
on (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
cto
r D = t1/t2
2. P
eak Tj =
P dm x Z
thjc +
Tc
Ri (°C/W)
τ
i (sec)
2.626 0.000052
0.6611 0.001297
0.7154 0.01832
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci
i
/
Ri
Ci=
τ
i
/
Ri
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
T
J
, Junct
ion T
emperatur
e (°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 21A
V
GS
= 10V
IRFR/U540ZPbF
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 14.
Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.
U.T
L
V
DS
+
-
V
DD
DRI
V
ER
A
15V
20V
V
GS
1K
VCC
DUT
0
L
25
50
75
100
125
150
175
St
arti
ng T
J
, Junct
ion T
emperatur
e (°C)
0
40
80
120
160
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
6.5
A
9.4
A
BOTTOM
21A
-75
-50
-25
0
25
50
75
100
125
150
175
T
J
, T
emperat
ure ( °C
)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 1.
0mA
ID
= 250µA
I
D
= 50µA
P1-P3
P4-P6
P7-P9
P10-P11
IRFR540ZPBF
Mfr. #:
Buy IRFR540ZPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 35A DPAK
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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